AW12M7258BLF8M Memory Cards, Modules |
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Allicdata Part #: | AW12M7258BLF8M-ND |
Manufacturer Part#: |
AW12M7258BLF8M |
Price: | $ 61.65 |
Product Category: | Memory Cards, Modules |
Manufacturer: | ATP Electronics, Inc. |
Short Description: | 4GB 204 PIN REGISTERED ECC SO-DI |
More Detail: | Memory Module 4GB 204-RDIMM |
DataSheet: | AW12M7258BLF8M Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 56.03720 |
Series: | -- |
Part Status: | Active |
Memory Size: | 4GB |
Package / Case: | 204-RDIMM |
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AW12M7258BLF8M is a type of memory module, featuring a component with a high operating frequency and low power requirement. It is used in some electronic devices, particularly those that need to quickly store and retrieve data. There are two main types of memory modules – DRAM (Dynamic Random Access Memory) and SRAM (Static Random Access Memory). The AW12M7258BLF8M module supports both types.
To understand more about the AW12M7258BLF8M, let’s explore its application field and working principle. The AW12M7258BLF8M is a highly integrated type of SRAM, designed for system-on-package (SOP) and system-in-package (SIP) applications. It is optimized for very low power operations that run on high speed clock rates. For example, the module supports up to 8 GB of density with a low-voltage range of 1.2V to 1.5V, depending on the chip.
The AW12M7258BLF8M memory module is mainly used in portable multimedia devices such as mobile phones, tablets, and digital cameras. It is also used for low power applications such as wristwatches and wearable medical devices. The key advantage of using the AW12M7258BLF8M module in these applications is its low power consumption, which allows for extended battery life.
The AW12M7258BLF8M works with a static access timing scheme, meaning that timings between electrical pulses are fixed. This allows for higher efficiency as the module does not waste energy on unnecessary pulses. Moreover, the module is capable of very fast transfers, allowing for quick access to information which is essential for multimedia devices.
The AW12M7258BLF8M has a power-off current of 20 µA and is capable of achieving a data rate of up to 26.67 GB/s. It is also able to operate over a wide range of temperatures, from -40 °C to 85 °C, which makes it suitable for use in higher-temperature environments. In addition, the module has a 128-bit data bus width, 256-bit DRAM interface, and 128-bit total interface.
Overall, the AW12M7258BLF8M is an ideal choice for many low power applications, offering high-density memory with a fast transfer rate. Its efficient static access timing scheme makes it an energy-efficient module, while its wide operating temperature range makes it a robust solution for many applications that require higher temperature tolerance.
The specific data is subject to PDF, and the above content is for reference
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AW12M7258BLH9M | ATP Electron... | 61.65 $ | 1000 | 4GB 204 PIN REGISTERED EC... |
AW12M7258BLK0M | ATP Electron... | 61.65 $ | 1000 | 4GB 204 PIN REGISTERED EC... |
AW12P7258BLF8M | ATP Electron... | 61.65 $ | 1000 | 4GB 204 PIN REGISTERED EC... |
AW12P7258BLH9M | ATP Electron... | 61.65 $ | 1000 | 4GB 204 PIN REGISTERED EC... |
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