B1100-13 Discrete Semiconductor Products |
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Allicdata Part #: | B1100DITR-ND |
Manufacturer Part#: |
B1100-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 100V 1A SMA |
More Detail: | Diode Schottky 100V 1A Surface Mount SMA |
DataSheet: | B1100-13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 790mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 100V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | B1100 |
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Diodes are essential components in modern electronic circuits. They are used to control the flow of current in a circuit and thereby to regulate the voltage that appears across an electrical component. The B1100-13 is an extremely popular rectifier diode and is used in many applications. This article will explore the application field and working principles of the B1100-13.
The B1100-13 is a single-phase, 50V rectifier diode under the Molded Silicone Controlled Rectifier (MSCR) product line. It is designed to provide fast, general-purpose switching and rectification, and is suitable for power supplies, inverters, converters, motor control, and DC/DC converters. It offers a low forward voltage drop and is able to handle currents of up to 1A.
The B1100-13 is characterized by its relatively large current handling capacity, low forward voltage drop, and fast reverse recovery time. This makes it suitable for use in high-efficiency switching applications, and allows it to switch on and off rapidly even in the presence of large variations in the source voltage. Additionally, it has a very low rate of temperature rise, which makes it suitable for applications where the temperature of the device needs to be kept low.
The working principle of the B1100-13 is simple. When a voltage is applied to the anode and cathode of the diode, a reverse-biased PN junction is formed. The diode then blocks the current, preventing it from flowing between the anode and cathode. However, when the reverse-biased PN junction is forward-biased (that is, when the anode is more positive than the cathode), the diode allows current to flow from the anode to the cathode and a voltage drop is created across the junction. This voltage drop can be used to control the flow of current in a circuit.
In conclusion, the B1100-13 is a single-phase, 50V rectifier diode. It features a low forward voltage drop and fast reverse recovery time, making it suitable for use in high-efficiency switching applications. The working principle of the diode is based on the formation of a reverse-biased PN junction, which allows it to control current flow in a circuit by creating a voltage drop.
The specific data is subject to PDF, and the above content is for reference
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