Allicdata Part #: | B1100BE-13-ND |
Manufacturer Part#: |
B1100BE-13 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 100V 1A SMB |
More Detail: | Diode Schottky 100V 1A Surface Mount SMB |
DataSheet: | B1100BE-13 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06723 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 790mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 200µA @ 100V |
Capacitance @ Vr, F: | 27pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -55°C ~ 150°C |
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B1100BE-13 application field and working principle (Diodes - Rectifiers - Single)
The B1100BE-13 is a silicon rectifier diode with an extremely low reverse leakage current. It is a diode designed primarily for fast switching applications. The device is manufactured using advanced planar diffusion techniques and highly reliable substrate technology.
The main application field of the B1100BE-13 includes power supplies, high frequency rectification, switching power converters, flyback supplies, automotive and avionic electronic systems, and point of load power supplies. The device\'s stability over temperature and humidity makes it suitable for serious environmental applications. Additionally, the device is designed to handle up to 1A current without any issues and its low profile package helps in providing enhanced reliability and robustness in applications where space constraint is a major factor.
The working principle of the B1100BE-13 is described as the rectifying of alternating current (AC) to direct current (DC). In simple terms, it works like a one-way valve for electric current. In this process, the diode allows current to flow only in one direction. When the cathode of the diode is made positive with respect to the anode, electrons on the outside of the crystal structure will flow freely and will cross through to the anode. On the other hand, when the anode is made positive with respect to the cathode, the crystal structure alignment prevents the electric current from flowing and the diode is said to be in reverse bias. This is the characteristic of the B1100BE-13
The B1100BE-13 is also equipped with certain features, which make it an efficient device under operating conditions. Firstly, the device has a low forward voltage drop (VF) of 1.1V, meaning it provides a very efficient and a fast rectification performance. Secondly, the device is gallium-arsenide based and has a very low reverse leakage current (IR) of 10 μA at 25°C, making it an ideal choice for higher frequency power conversions. It also has very good reverse transfer characteristics.
The B1100BE-13 is a highly reliable and efficient device which finds wide range of applications in areas such as power supplies, switching power converters, avionic electronic systems, and point of load power supplies. Its on chip structure coupled with low reverse leakage current, low forward voltage drop and high efficient rectification capabilities makes it an ideal choice for users.
The specific data is subject to PDF, and the above content is for reference
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