B250Q-13-F

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	2A
Voltage - Forward (Vf) (Max) @ If:	700mV @ 2A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	500µA @ 50V
Capacitance @ Vr, F:	200pF @ 40V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AA, SMB
Supplier Device Package:	SMB
Operating Temperature - Junction:	-65°C ~ 150°C

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B250Q-13-F Application Field and Working PrincipleDiodes, consisting of a single PN junction, are one of the most commonly used components in electronic devices. The B250Q-13-F is a PN junction diode designed for use in a variety of applications such as rectification and switching applications. This article will discuss the B250Q-13-F’s application field and working principle.The B250Q-13-F is a silicon rectifier diode, commonly used for radio frequency (RF) and low-frequency applications. It is suitable for switching, rectification, and protection operations at frequencies up to 0.25MHz. The diode also has a peak reverse voltage (VRM) of 125V and a repetitive peak reverse voltage (VRSM) of 140V.The B250Q-13-F is suitable for use in a variety of applications including power circuits, data signal circuits, inverter circuits, voltage-division circuits, and signal-level circuits. It is also well-suited for AC-DC conversion circuits, DC-DC conversion circuits, rectifier circuits, and filter circuits.In power circuits, the B250Q-13-F is typically used as a rectifier to convert AC current to DC current and reduce AC ripple. In data signal circuits, the diode is used to shape the signal for improved signal integrity. In inverter circuits, the diode is typically used as a switch and for protection against excessive current or voltage.The working principle of the B250Q-13-F is based on the diode’s PN junction structure. The PN junction consists of two layers of semiconductor material, a P-type material and an N-type material, which are connected together. The P-type material is positively charged and the N-type material is negatively charged. When a voltage is supplied, a small current can flow through the junction. If the applied voltage is positive with respect to the P-type material, the diode is considered forward-biased, and current can flow through the junction; if the voltage is reverse-biased, the current is blocked.The B250Q-13-F’s design also includes a protection clamp that limits transient overvoltage. This allows the diode to withstand high reverse voltages without sustaining any permanent damage.The B250Q-13-F is a silicon PN junction diode suitable for RF, low-frequency and switching applications. It can be used in power circuits, data signal circuits, inverter circuits, and voltage-division circuits. The diode’s PN junction structure allows it to function as a rectifier and switch. Its protection clamp also protects it from transient overvoltages.

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