B25X80S/W-R Allicdata Electronics
Allicdata Part #:

B25X80S/W-R-ND

Manufacturer Part#:

B25X80S/W-R

Price: $ 21.96
Product Category:

Uncategorized

Manufacturer: Altech Corporation
Short Description: WIRE DUCT 25X80MM 2M LGTH(8) COV
More Detail: N/A
DataSheet: B25X80S/W-R datasheetB25X80S/W-R Datasheet/PDF
Quantity: 1000
8 +: $ 19.96470
Stock 1000Can Ship Immediately
$ 21.96
Specifications
Series: *
Part Status: Active
Description

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The B25X80S/W-R is an electronic component used in a variety of applications. It is a silicon-based field effect transistor (FET) used extensively in signal conditioning, frequency control, power control, and switching applications. This guide will discuss the application field and working principle of the B25X80S/W-R.The B25X80S/W-R is most often used for power control applications, such as controlling the output voltage range, output current range, or other parameters that require precision. The device has a wide operating voltage range of -6 to 80V and can support currents up to 65A. It is also suitable for use in a variety of high frequency signal condition applications. In addition to the large current capacity, it offers high switching speeds of up to 15MHz, making it an ideal choice for high-speed switching systems.The B25X80S/W-R has anther unique feature - it can be used as a dual-gate FET device. This means that the device can be used to create two distinct channels of current from a single gate. The first channel is the source channel, which is the output of the FET, and the second channel is the drain channel, which is the input. This makes the B25X80S/W-R an ideal choice for applications that require two channels of current.In addition to being a dual-gate FET device, the B25X80S/W-R has a unique application in the field of radiofrequency (RF) signal conditioning. This is because the device has a high MHz to kHz conversion ratio that is beneficial in RF applications. As the RF signals flow through the device, the MHz to kHz ratio ensures that the signals remain in their correct frequency range.The working principle of the B25X80S/W-R is as follows. When a current is applied to the gate of the device, the charge carrier at the gate undergoes the effect of resistance. This resistance is known as Ohmic resistance and it allows the charge carrier to remain in its current state until it is displaced by a greater applied current. As the applied current increases, the charge carrier moves towards the source of the device, thus increasing the electrical resistance and decreasing the current flow. This in turn causes the output voltage of the device to decrease.The B25X80S/W-R is a versatile and reliable electronic component that is suitable for a variety of switching and signal conditioning applications. With its high current capacity, wide operating voltage range, and useful dual-gate FET configuration, the B25X80S/W-R is the ideal choice for many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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