B260BE-13

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Diodes - Rectifiers - Single - B260BE-13 Application Field and Working Principle

B260BE-13 is a type of semiconductor diode (with rectifier function) developed by China’s leading semiconductor chipmaker, MediaTech. This diode has a maximum operating temperature of +150 degrees Celsius and is suitable for use in high temperature environments. In addition, its forward voltage drop is very low, enabling it to be used in applications where low power consumption requirements along with high switching speeds are desired.

B260BE-13 is primarily used in the manufacture of low-noise analog-to-digital converters (ADC) and digital-to-analog converters (DAC). It is also used as a protection diode in systems that rely on a single voltage source such as Motor Control systems (MCS) and Power Lighting Control systems (PLCS).

The working principle of B260BE-13 is based on the fact that it has two layers - an N-type layer and a P-type layer. When the diode is forward-biased, i.e. when the anode (positive) side is connected to a higher voltage while the cathode (negative) side is connected to a lower voltage, the N-type layer gets positively charged while the P-type layer gets negatively charged. This change in charge creates a potential barrier between the two layers. As long as the voltage across the two layers remains below the breakdown voltage of the diode, current will not flow through the diode.

When the voltage across the two layers is higher than the breakdown voltage, current begins to flow. At this point, the N-type layer will become positively charged while the P-type layer will become negatively charged, creating a new potential barrier between them. This barrier is lower than the original barrier and allows current to flow from the anode to the cathode. This process is known as "rectification" and is what gives B260BE-13 its unique characteristics.

The performance of B260BE-13 largely depends on the doping material used during its manufacture. MediaTech has developed a fabrication process in which a combination of boron-doped and antimony-doped silicon is used. This combination improves the diode\'s thermal stability and prevents damage due to high temperature operation. It also reduces the leakage current of the diode, which is critical in applications where low noise levels and high signal-to-noise ratios are essential.

B260BE-13 has proven itself to be a reliable and cost-effective solution for low-noise analog-to-digital converters, digital-to-analog converters, and motor control systems. It has a low forward voltage and power dissipation, enabling it to be used in high temperature and low voltage applications. In addition, its low leakage current makes it ideal for high signal-to-noise ratio applications. Finally, its boron-doped and antimony-doped silicon fabrication process ensures stable operation in high temperature environments.

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