B360BQ-13-F Allicdata Electronics
Allicdata Part #:

B360BQ-13-FDITR-ND

Manufacturer Part#:

B360BQ-13-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE SCHOTTKY 60V 3A SMB
More Detail: Diode Schottky 60V 3A Surface Mount SMB
DataSheet: B360BQ-13-F datasheetB360BQ-13-F Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The B360BQ-13-F is a silicon epitaxial planar type Schottky barrier diode specifically designed for high speed switching applications. This component is rated at a DC blocking voltage of 30V, a nominal forward current of 135mA, and a reverse leakage current of 0.4mA at a temperature of -25 degree C. This component is made from an ITO (Indium Tin Oxide) substrate material that is passivated for long-term reliability and performance. It is important to note that this component is not suitable for rectification in high voltage or high temperature applications.

Applications

The B360BQ-13-F can be used in a variety of applications such as portable electronic devices, telecom and datacom equipment, automotive systems, medical devices and more. It is suitable for switching, voltage-clamping and other applications. Some of the specific applications include:

  • Controlling the forward voltage of an inductor
  • Controlling current flow in DC-DC converters
  • Protecting against high-voltage transients
  • Speeding up voltage-regulating ICs
  • DC-to-DC conversion
  • Rectifying AC to DC power

Working Principle

The B360BQ-13-F is a Schottky diode, so it works in a manner slightly different from ordinary PN diodes. This component does not rely on the movement of majority carriers, instead it works on the basis of the thermionic effect, which is the emission of electrons when a heated conducting surface is placed in close proximity to a cold surface. The electrons escape to the cold surface, forming a space charge and causing a potential difference between the two surfaces. This causes a current to flow, and when the current reaches a certain level the diode breaks down and becomes saturated. This is the basic mechanism behind the operation of the B360BQ-13-F.

Conclusion

The B360BQ-13-F is a silicon epitaxial planar type Schottky barrier diode specifically designed for high speed switching applications such as portable electronic devices, telecom and datacom equipment, automotive systems, medical devices and more. This component is rated at a DC blocking voltage of 30V, a nominal forward current of 135mA, and a reverse leakage current of 0.4mA at a temperature of -25 degree C. It works by the thermionic effect, and can be used in various high speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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