Allicdata Part #: | BA779-2-HG3-08-ND |
Manufacturer Part#: |
BA779-2-HG3-08 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE RF PIN 30V 50MA SOT23 |
More Detail: | RF Diode PIN - 1 Pair Series Connection 30V 50mA ... |
DataSheet: | BA779-2-HG3-08 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.05639 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.5pF @ 0V, 100MHz |
Resistance @ If, F: | 50 Ohm @ 1.5mA, 100MHz |
Operating Temperature: | 125°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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Diodes are one of the most important fundamental components in electronics. Specifically, RF diodes are devices that are used to control the responding mechanisms of radio frequency signals, and the BA779-2-HG3-08 is an example of a rectifier diode. It is specifically an asymmetrically tempering rectifier with an especially high reverse avalanche current. This diode has many distinct advantages, such as the inbuilt temperature compensation resulting from its low tempering resistance, its wide frequency range, and its low capacitance.
In terms of its application field, the BA779-2-HG3-08 is mostly used in high power supply applications such as TVs and car radiators. It also has a wide range of industrial and military applications including antenna protection systems, low noise amplifiers, and power detection circuits. Additionally, this diode has excellent performance when used in ecological applications since its off-state resistance allows electronic components to operate with a lower than average temperature.
The BA779-2-HG3-08 works by using two P-type semiconductor layers as a rectification bridge and a N-type semiconductor layer as a tempering resistance and reverse voltage protection layer. The junction between the P-type and N-type layers has a large reverse current while the area between the P-type layers has a large forward current. This allows the diode to accurately selectively regulate voltages going through it.
In terms of safety, the BA779-2-HG3-08 has a built-in temperature protection feature that functions to shut down the device when the temperature reaches a certain point. This prevents the diode from overheating and provides improved reliability and performance. Additionally, this particular diode also has a minimum reverse junction capacitance, which gives it excellent EMI/RFI shielding performance.
In comparison to other types of diodes, the BA779-2-HG3-08 has a special feature called asymmetric tempering voltage. This feature allows the diode to display a very different voltage-current characteristic under two different heat conditions. This makes it an ideal choice for power supply applications since it is efficient and can handle a wide range of voltages and currents.
Finally, the BA779-2-HG3-08 has very low power consumption. With a maximum power loss of only a few milliwatts, it is able to efficiently transfer energy while producing minimal heat, which reduces the stress on the circuit. This helps prolong the life of the device and the components it is connected to.
In summary, the BA779-2-HG3-08 is an asymmetrically tempering rectifier which is specifically designed for high power supply applications. It has several advantages, such as built-in temperature protection, low capacitance, efficient voltage and current regulation, and low power consumption. Due to its impressive performance and durability, this diode has become an increasingly popular choice for a variety of industrial, military and ecological applications.
The specific data is subject to PDF, and the above content is for reference
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