BA779-2-HG3-18

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max):	30V
Current - Max:	50mA
Capacitance @ Vr, F:	0.5pF @ 0V, 100MHz
Resistance @ If, F:	50 Ohm @ 1.5mA, 100MHz
Operating Temperature:	125°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3

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BA779-2-HG3-18 Application Field and Working PrincipleBA779-2-HG3-18, also known as HG3-18 diode, is a type of diode designed for use in various radio frequency (RF) applications. This diode is commonly used for RF amplifiers, mixers, and oscillators. It is also used in radio, television, telecommunications, and missile guidance systems.This RF diode has a wide range of operation frequencies. It is typically used between 50 and 500 kHz, although frequencies up to 1500 MHz have been tested. The BA779-2-HG3-18 can handle up to 1000 V of reverse blocking and maximum forward current of 1 A. It has an exceptional reverse recovery time of less than 1 ns, which allows it to switch quickly between conducting and non-conducting states.The HG3-18 is an epitaxial silicon diode, meaning that it is grown on top of a single crystal substrate. The epitaxial layer is composed of several layers of semiconductor material, each layer having its own band gap energy range. This allows the diode to be engineered for specific electrical properties and desired performance characteristics.The working principle behind the BA779-2-HG3-18 diode is fairly simple. When the diode is connected to an alternating current (AC) source, the alternating charges and current flow through the diode induce a voltage across the diode junction. This voltage is known as the junction voltage, and it is what allows the diode to conduct in one direction and not the other. When the polarity of the applied voltage is such that the junction voltage is forward-biased, it allows current to flow through the diode. In this state, the diode has a low impedance and can be used as an amplifier. When the junction voltage is reverse-biased, the diode has a very high impedance, blocking the flow of current in the opposite direction.The junction voltage of the BA779-2-HG3-18 is approximately 0.37 V when it is forward biased and the peak forward current is 0.5 A. The breakdown voltage, or voltage at which the diode begins to conduct reverse current, is typically around 10 V.In summary, the BA779-2-HG3-18 diode is a high-performance RF diode that can be used for a wide range of radio frequency applications. Its epitaxial construction and low capacitance allows it to operate at higher frequencies and with greater efficiency. Its low-impedance, reverse current-blocking characteristics make it well-suited for mixers and oscillators. Furthermore, its high junction voltage and high breakdown voltage give it further versatility in regards to power handling. All these features make the HG3-18 diode one of the most popular RF diode of its kind.

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