Allicdata Part #: | BAS21FSTR-ND |
Manufacturer Part#: |
BAS21 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 250V 200MA SOT23 |
More Detail: | Diode Standard 250V 200mA Surface Mount SOT-23-3 (... |
DataSheet: | BAS21 Datasheet/PDF |
Quantity: | 10000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 250V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 200V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | BAS21 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A BAS21 is a single diode rectifier featuring a chip package made out of silicon and a schottky metal layer which is used for rectifying and regulating the flow of electricity. It uses a Schottky diode to direct current one direction and prevent it from reversing direction. This provides protection from current surges and allows for a more efficient transmission of power. It is often used for circuit protection, voltage regulation, and voltage stabilizing in a variety of devices.
The body of the BAS21 is typically made of a metal alloy that is designed to withstand high temperatures and resist corrosion, even when the device is in continuous use. The main component of the BAS21 is a diode, which is made of a semiconductor material that limits the flow of electricity in a single direction. The shape of the device is similar to a disk, with a flat circular shape that is designed to allow the device to be soldered onto a printed circuit board.
The diode junction on the BAS21 is formed by diffusion of dopant ions into the surface. The negatively-charged ions are called electrons, and they are responsible for the current flow. When the anode of the diode is positive with respect to the cathode, the electrons move from the anode to the cathode and the current flows, making the device become "on." On the other hand, when the cathode is more positive than the anode, the electrons can’t move and the current flow is blocked and the device is "off."
Due to its small size and relatively simple design, the BAS21 is an ideal choice for circuit protection, voltage regulation, and voltage stabilizing. Additionally, it can be placed in a variety of different locations in a circuit, making it very versatile. Furthermore, the device is relatively inexpensive, making it a great cost-effective solution to many electronic projects.
The BAS21 is designed to have a fast response time, allowing it to react quickly to changes in the circuit. It is also designed to be stable and reliable, with a low on-resistance, low leakage current, and high peak voltage. All of these features make the BAS21 an ideal choice for protecting circuits from high voltages and current surges, allowing them to operate more efficiently.
The BAS21 is a great choice for blocking and regulating current flow for a variety of different applications. It is often used for circuit protection in consumer electronics, power supplies, motor control systems, and lighting systems. It can also be used for voltage regulation and voltage stabilizing in power supplies, robotics, and medical devices. Additionally, it is often used for EMI suppression in automotive electronics, military applications, and other high vibration applications.
In conclusion, the BAS21 is a reliable and cost-effective solution for providing reliable and efficient current flow for a variety of different applications. Its fast response time, low on-resistance, low leakage current, and high peak voltage make it an ideal choice for protecting circuits from high voltage and current surges. Its versatility and small size also make it great for use in a wide variety of different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BAS29,215 | Nexperia USA... | 0.04 $ | 1000 | DIODE AVALANCHE 90V 250MA... |
BAS285-GS08 | Vishay Semic... | 0.04 $ | 7500 | DIODE SCHOTTKY 30V 200MA ... |
BAS21M3T5G | ON Semicondu... | -- | 8000 | DIODE GEN PURP 250V 200MA... |
BAS29 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 120V 200MA... |
BAS21W-7-F | Diodes Incor... | -- | 9000 | DIODE GEN PURP 200V 200MA... |
BAS20W-7-F | Diodes Incor... | -- | 6000 | DIODE GEN PURP 150V 200MA... |
BAS21DW5T1G | ON Semicondu... | -- | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21TW-7 | Diodes Incor... | -- | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21UE6327HTSA1 | Infineon Tec... | -- | 1000 | DIODE ARRAY GP 200V 250MA... |
BAS21AVD,165 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAS21LT3G | ON Semicondu... | -- | 20000 | DIODE GEN PURP 250V 200MA... |
BAS21GWX | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 200V 225MA... |
BAS21,215 | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 200V 200MA... |
BAS20,215 | Nexperia USA... | 0.1 $ | 5849 | DIODE GEN PURP 150V 200MA... |
BAS21HMFHT116 | ROHM Semicon... | -- | 3000 | DIODE GEN PURP 200V 200MA... |
BAS20-7-F | Diodes Incor... | -- | 3000 | DIODE GP 150V 200MA SOT23... |
BAS21W,115 | Nexperia USA... | 0.03 $ | 1000 | DIODE GEN PURP 250V 225MA... |
BAS21A RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21C RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21S RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
BAS21TR | SMC Diode So... | 0.03 $ | 1000 | DIODE GEN PURP 200V 200MA... |
BAS20LT3G | ON Semicondu... | 0.01 $ | 1000 | DIODE GEN PURP 200V 200MA... |
BAS21HT3G | ON Semicondu... | -- | 10000 | DIODE GEN PURP 250V 200MA... |
BAS20LT1G | ON Semicondu... | -- | 75000 | DIODE GEN PURP 200V 200MA... |
BAS20HT1G | ON Semicondu... | -- | 24000 | DIODE GEN PURP 200V 200MA... |
BAS21AHT1G | ON Semicondu... | -- | 45000 | DIODE GEN PURP 250V 200MA... |
BAS2103WE6327HTSA1 | Infineon Tec... | -- | 141000 | DIODE GEN PURP 200V 250MA... |
BAS21H,115 | Nexperia USA... | 0.04 $ | 3000 | DIODE GEN PURP 200V 200MA... |
BAS21J,115 | Nexperia USA... | 0.06 $ | 36000 | DIODE GEN PURP 300V 250MA... |
BAS21DW-7 | Diodes Incor... | -- | 6000 | DIODE ARRAY GP 200V 200MA... |
BAS21T-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
BAS21TMR6T1G | ON Semicondu... | -- | 3000 | DIODE SW 250V 200MA SC74D... |
BAS20-TP | Micro Commer... | 0.02 $ | 3000 | DIODE GEN PURP 150V 200MA... |
BAS21WS-TP | Micro Commer... | 0.03 $ | 6000 | DIODE GEN PURP 250V 200MA... |
BAS21T-TP | Micro Commer... | 0.03 $ | 3000 | DIODE GEN PURP 250V 200MA... |
BAS20-E3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 200MA... |
BAS21WT-TP | Micro Commer... | 0.03 $ | 1000 | DIODE GEN PURP 200V 200MA... |
BAS21-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
BAS21SW,115 | Nexperia USA... | 0.2 $ | 21383 | DIODE ARRAY GP 250V 225MA... |
BAS21AW,115 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 250V 225MA... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...