| Allicdata Part #: | BAS28-7DITR-ND |
| Manufacturer Part#: |
BAS28-7 |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | DIODE ARRAY GP 85V 215MA SOT143 |
| More Detail: | Diode Array 2 Independent Standard 85V 215mA (DC) ... |
| DataSheet: | BAS28-7 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.04559 |
| 6000 +: | $ 0.03964 |
| 15000 +: | $ 0.03369 |
| 30000 +: | $ 0.03171 |
| 75000 +: | $ 0.02973 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Configuration: | 2 Independent |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 85V |
| Current - Average Rectified (Io) (per Diode): | 215mA (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 4ns |
| Current - Reverse Leakage @ Vr: | 1µA @ 75V |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-253-4, TO-253AA |
| Supplier Device Package: | SOT-143 |
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Diodes - Rectifiers - Arrays - BAS28-7 Application Field and Working Principle
The BAS28-7, manufactured by NXP Semiconductors, is an array package consist of 7 Schottky barrier diodes. It is widely used in the field of rectification and it features low forward voltage drop and fast recovery time. This makes it highly suitable for applications that require high efficiency power supply designs. In this article we will discuss the application field and working principle of the BAS28-7.
Application Field
The BAS28-7 is mainly used for RFI (radio frequency interference) and EMI (electromagnetic interference) mitigation in power supply applications, as it is a low power loss rectifier. In addition, the BAS28-7 can be used in high-speed semiconductor switching applications, such as DC-DC converters, or any application that requires low-level rectification.
Working Principle
The BAS28-7 semiconductor package consists of 7 individual Schottky barrier diodes. Each diode is formed using a metal-semiconductor junction. This allows the diode to have a low forward voltage. When a voltage is applied across a Schottky barrier diode, holes in the semiconductor will be repelled by the negative side of the voltage and will move to the positive side, forming a “diode-bridge”, which is a type of semiconductor rectifier. This rectifier will block current from travelling in the opposite direction, and it will allow current to flow in the forward direction, thus allowing for the rectification of voltage.
The BAS28-7 is also characterized by its fast recovery time (trr), which makes it suitable for high-speed switching applications. Trr is mainly affected by the size of the junction and by the doping of the p-n junction. The faster a diode is able to recover its forward voltage drop, the faster it is able to open the rectifier bridge, thus allowing the current to switch directions quickly. The BAS28-7 offers good switching speeds, making it desirable in high speed circuit designs.
Conclusion
The BAS28-7 package is widely used in applications requiring fast and efficient rectification, such as high speed switching and power supply applications. It diminishes unwanted RFI and EMI interference, while also taking advantage of its low power loss. It is an ideal choice for any application that necessitates lower switching losses and faster switching speeds.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| BAS21WS-TP | Micro Commer... | 0.03 $ | 6000 | DIODE GEN PURP 250V 200MA... |
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| BAS21E6327HTSA1 | Infineon Tec... | 0.03 $ | 1000 | DIODE GEN PURP 200V 250MA... |
| BAS20-E3-08 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 200MA... |
| BAS21-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS20W-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 150V 200MA... |
| BAS21AW,115 | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 250V 225MA... |
| BAS20DW-7 | Diodes Incor... | -- | 1000 | DIODE ARRAY GP 150V 200MA... |
| BAS21W-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS21-HE3-08 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS21HT1G | ON Semicondu... | -- | 81 | DIODE GEN PURP 250V 200MA... |
| BAS21GWJ | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 200V 225MA... |
| BAS20-G3-08 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 200MA... |
| BAS20W-7-F | Diodes Incor... | -- | 6000 | DIODE GEN PURP 150V 200MA... |
| BAS21GWX | Nexperia USA... | 0.01 $ | 1000 | DIODE GEN PURP 200V 225MA... |
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| BAS21TA | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS29,215 | Nexperia USA... | 0.04 $ | 1000 | DIODE AVALANCHE 90V 250MA... |
| BAS20-E3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 200MA... |
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| BAS21C RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
| BAS21 RFG | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 250V 200MA... |
| BAS21S-TP | Micro Commer... | 0.03 $ | 1000 | DIODE ARRAY GP 250V 200MA... |
| BAS21W,115 | Nexperia USA... | 0.03 $ | 1000 | DIODE GEN PURP 250V 225MA... |
| BAS21UE6327HTSA1 | Infineon Tec... | -- | 1000 | DIODE ARRAY GP 200V 250MA... |
| BAS21JF | Nexperia USA... | 0.04 $ | 1000 | DIODE GEN PURP 300V 250MA... |
| BAS21LT1G | ON Semicondu... | -- | 60000 | DIODE GEN PURP 250V 200MA... |
| BAS21T-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS21-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 200V 200MA... |
| BAS21_D87Z | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 250V 200MA... |
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BAS28-7 Datasheet/PDF