BAS21QAZ

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	250V
Current - Average Rectified (Io):	330mA (DC)
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 200mA
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	100nA @ 200V
Capacitance @ Vr, F:	2pF @ 0V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	3-XDFN Exposed Pad
Supplier Device Package:	DFN1010D-3
Operating Temperature - Junction:	150°C (Max)

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The BAS21QAZ is a high-performance rectifier diode that provides high-speed switching applications. It is a single diode with two terminals and a two-pin connection. The two pins are connected in series so that when one of them is connected to the source voltage and the other to the ground, the current flows only in one direction. This basic rectifier diode is usually used in low-voltage and low-current applications.The BAS21QAZ has a reverse-blocking voltage ratings which ranges between 50 and 90 volts. This means that the diode can block the current in the direction opposite to the one it was designed to pass. The forward current rating of the BAS21QAZ is at its maximum when a maximum voltage of 9 volts is applied. The BAS21QAZ is also highly efficient due to its relatively low forward-voltage drop and its low capacitance. It does not suffer from the usual losses that other diode types have. This makes it a suitable choice for many high-current applications. This is also the reason why it is widely used in power rectification, DC-DC converters, and other high-speed switching applications.The BAS21QAZ has a reverse-recovery time of only 20ns. This helps in minimizing the power loss in high-current applications. The reverse-recovery time is the time it takes the diode to block the current after it has been forward biased. This is an important consideration when selecting the appropriate diode for specific applications. In terms of its working principle, the BAS21QAZ is actually a charge-controlled semiconductor device. This means that when a positive voltage is applied to the diode, it causes a majority of electrons to move toward the anode and form a depletion layer. This depletion layer blocks the reverse current from passing through the diode. The depletion layer\'s width is determined by the applied voltage and current. As the reverse voltage increases, the depletion layer increases in size and eventually becomes an insulator. This helps in the BAS21QAZ\'s ability to provide isolation between two circuits. This is why it is used in many high-current applications, as it provides efficient insulation.Overall, the BAS21QAZ diode is a high-speed switching and high-efficiency rectifier diode suitable for a wide range of applications. It offers low losses and excellent isolation even when it is used in applications that require high current. It is rated for a wide range of voltages and currents, making it suitable for different applications requiring different types of rectifiers. The high-speed switching and the reverse-recovery time of this diode make it a fast and efficient device for many high-current applications.

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