BAS28E6327HTSA1 Allicdata Electronics
Allicdata Part #:

BAS28E6327HTSA1TR-ND

Manufacturer Part#:

BAS28E6327HTSA1

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE ARRAY GP 80V 200MA SOT143
More Detail: Diode Array 2 Independent Standard 80V 200mA (DC) ...
DataSheet: BAS28E6327HTSA1 datasheetBAS28E6327HTSA1 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.04260
6000 +: $ 0.03834
15000 +: $ 0.03408
30000 +: $ 0.03195
75000 +: $ 0.02840
Stock 3000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4
Base Part Number: BAS28
Description

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BAS28E6327HTSA1 application field and working principle

Diodes - Rectifiers - Arrays

BAS28E6327HTSA1 is a high power, fast switching Schottky barrier rectifier diode, specially designed for high frequency switch mode power supplies. This device has very low forward voltage drop and extremely fast switching capabilities which make it possible to be used in high frequency and low voltage switching mode power supplies. The features of this device make it possible to be used in the switching regulated, minimum power loss and double primary and auxiliary rectifier applications.

The BAS28E6327HTSA1 can be used in the application of buck/boost converters and negative voltage regulator applications. It can be used in ultra-low power indicators, switching power supplies with output power up to 30A and output voltage up to 20V. The maximum operating temperature range of the device is between -55°C to 150°C which can be used in highly demanding thermal applications.

BAS28E6327HTSA1 has a feature of integrated electrostatic protection which provides low leakage current and prevents the device from electrostatic discharge protective and thus making them suitable for a wide range of electrostatic discharge activities. The device is lead-free and RoHS-compliant.

The working principle of the BAS28E6327HTSA1 is based on the Schottky barrier rectifier diode technology. It consists of an anode on one side, a cathode on the other, and a metal-semiconductor junction between them. When the diode is forward biased, the metal-semiconductor junction will open, allowing the current to flow through it. When the diode is reverse biased, the metal-semiconductor junction will be in reverse and no current will flow through it. Because of the low voltage drop across the device, it can be effectively used in high frequency and low voltage switching mode power supplies.

BAS28E6327HTSA1 can be used in automotive, redundant power supply systems, medical instrument, and communication equipment, etc. It allows system design engineers to take advantages of its low forward voltage drop, fast switching speed, and low leakage current compared to conventional PN-junction diode.

In conclusion, the BAS28E6327HTSA1 is a high power and fast switching Schottky barrier rectifier diode specially designed for high frequency switch mode power supplies. It is suitable for many application areas such as high voltage, high efficiency, automotive, redundant power supply systems, medical instrument, and communication equipment. It has low forward voltage drop, fast switching speed, and low leakage current. This device also has integrated electrostatic protection and is RoHS-compliant.

The specific data is subject to PDF, and the above content is for reference

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