BAS40-05V,115 Allicdata Electronics
Allicdata Part #:

1727-1559-2-ND

Manufacturer Part#:

BAS40-05V,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ARRAY SCHOTTKY 40V SOT666
More Detail: Diode Array 2 Pair Common Cathode Schottky 40V 120...
DataSheet: BAS40-05V,115 datasheetBAS40-05V,115 Datasheet/PDF
Quantity: 12000
4000 +: $ 0.05544
8000 +: $ 0.04990
12000 +: $ 0.04435
28000 +: $ 0.04158
Stock 12000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 2 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Small Signal =
Current - Reverse Leakage @ Vr: 10µA @ 40V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Description

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The BAS40-05V,115 is a diode-based component within the diodes, rectifiers and arrays family, and can be used for a variety of applications. The component is used in areas such as Schottky protection, high frequency power rectification, logic level shifting, and peak clamping and current limiting circuitry. The component is made up of a vibrant, bright metal contact and an anode plate as well as a silicon substrate to help provide a protective barrier against any stresses induced on the component.

A key component of the BAS40-05V,115 is its metal contact, which is made up of an alloy known as Indium Tin Oxide (ITO). This metal contact allows low Vf and the fast switching rates necessary for applications requiring high frequency rectification. An additional advantage to using this alloy is its ability to maintain electrical continuity even under extreme operating conditions. By way of the indium oxide, an electrically conductive path is created between the anode plate and the substrate, allowing for electrons to move from the anode plate to the substrate.

The anode plate is made up of a doped-semiconductor wafer, which is typically a P-type-doped material. Doping the material allows for a low voltage drop and low dissipated power for the component, ensuring that the anode plate performs optimally in high frequency conditions. By passing a current through the anode plate, which is then shifted from the metal contact to the substrate, current can be rectified or limited and clamped as desired.

The substrate within the BAS40-05V,115 allows for the component to be surface mountable, and is typically constructed of a PN-type semiconductor material. The semiconductor material provides a barrier to guard against any stress that may be applied to the component. By maintaining its position beneath the anode plate, the substrate helps to provide a pressure relief to the component and reduces the risk of damages to it.

In order to use the BAS40-05V,115, it must be connected to a circuit in order to provide the necessary current for rectification. The circuit must be designed to provide a certain voltage, which can be obtained by coupling the part with some resistive element to help regulate the voltage level. The voltage should always remain above the minimum required for the component to work and it should also be set below the maximum voltage to avoid damaging the component.

The BAS40-05V,115 is a great option when it comes to Schottky protection, high frequency power rectification, logic level shifting, and peak clamping and current limiting circuitry. The component can be coupled with other devices and elements to provide reliable, fast and efficient voltage and current rectification, as well as act as a protective barrier against destructive voltages.

The specific data is subject to PDF, and the above content is for reference

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