BAT54C-E3-18 Discrete Semiconductor Products

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BAT54C-E3-18 is a kind of diode, rectifier, and array which consists four independent Schottky barrier diodes in one case. This device is suitable in a variety of applications. With its epitaxial construction and LOW forward voltage drop, it is specially designed for high efficiency, moderate speed switching, and low noise applications. Its low forward voltage drop gives it an advantage over normal PN diodes and other Schottky diodes.

The main application fields of BAT54C-E3-18 are high speed power switching, DC to DC converter, low switching noise applications, series voltage regulator, battery charger, AC to DC rectifier and the like. This rectifier array is particularly suitable for use in low voltage, high frequency, high frequency inverters, free wheeling, and polarity protection applications.

BAT54C-E3-18 diode, rectifier, and array has a typical reverse leakage current of 1-3 μA, and junction capacitance of about 20 pF. It has a small forward voltage drop of about 0.4V and a very low thermal resistance of about 30 mΩ per °C. It has a reverse recovery time of 4 ns, and a maximium repetitive peak reverse voltage of 18V.

The working principle of this rectifier array mainly involves the device’s PN junctions allowing current to flow easily in one direction- from anode (positive) to cathode (negative). This diode, rectifier, and array also has a way to block any current flow in the opposite direction. This means that electrons can move through PN junctions, but due to the potential barrier generated by junction PN, current will flow in the intended direction only. This is the working principle of the BAT54C-E3-18 diode, rectifier, and array.

In conclusion, BAT54C-E3-18 is a kind of diode, rectifier, and array which can be used in a wide range of applications including DC to DC converter, AC to DC rectifier and the like. Its typical reverse leakage current of 1-3 μA, junction capacitance of about 20 pF, low forward voltage drop of about 0.4V, and reverse recovery time of 4 ns provide excellent performance for power switching and low noise applications.

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