BAT54XV2T1H

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BAT54XV2T1H is a surface-mounted dual silicon power rectifier diode. It belongs to Diodes -Rectifiers - Single, and mainly used for general purpose rectification. Various application fields include on-line smps, telecom power supply, server power, adapter and etc. What’s more, it allows for a medium reverse leakage current specifications at high temperature, improving temperature characteristics and temperature rise.

In most general applications, a single silicon diode can provide basic rectification. However, due to the presence of high-impedance silicon, a single diode may not be sufficient. In such applications, using a dual silicon power rectifier diode, such as BAT54XV2T1H, can improve performances and reduce cost. Compared with a single diode, a dual diode can combine two diodes in one package, with improved surge capability and power dissipation.

The BAT54XV2T1H offers an improved forward voltage between two diodes and greater efficiency, due to its improved reverse leakage current specifications at temperature. The package of this dual silicon power rectifier diode is a surface-mounted SOT89-3 package, with superior power and leakage survivability, designed to be free from scratches and dents. The sleeve of this package also provides excellent thermal performance.

BAT54XV2T1H can handle additional junction-to-case voltage stress. Thus is suitable for high power dissipations, up to 1.5A for 1.5V. Operation can be done in an environment between -55°C and 125°C with a low forward voltage drop and good temperature characteristics, allowing current rating up to 2.85A.

As a dual silicon power rectifier diode, BAT54XV2T1H works by rectifying AC electricity into DC electricity. It has two pins connected to a semiconductor diode. When sufficient forward voltage is applied to the diode, current can be conducted through the PN junction. As a result, current flows through one of the two pins, while no current flows through the other. The direction of this flow is determined by the forward voltage applied to the diode – if the diode is forward-biased, electricity will flow in one direction, if the diode is reverse-biased, electricity will not be conducted.

Additionally, BAT54XV2T1H has a fast recovery rate compared to other power rectifier diodes. Its fast recovery rate is determined by its reverse recovery time: current flows through the diode until a threshold voltage is reached and the current must be returned to the source. The faster a diode can return the current, the lesser power is used and the more efficient the diode.

In conclusion, BAT54XV2T1H is a dual silicon power rectifier diode with improved surge capability and power dissipation specifications. It can be used in various application fields, where improved forward voltage drop, low forward voltage drop, medium reverse leakage current and good temperature characteristics is demanded such as on-line smps, telecom power supply, server power, adapter and etc.

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