BAT54XV2T5G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	30V
Current - Average Rectified (Io):	200mA (DC)
Voltage - Forward (Vf) (Max) @ If:	800mV @ 100mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	5ns
Current - Reverse Leakage @ Vr:	2µA @ 25V
Capacitance @ Vr, F:	10pF @ 1V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	SC-79, SOD-523
Supplier Device Package:	SOD-523
Operating Temperature - Junction:	-55°C ~ 125°C
Base Part Number:	BAT54X

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Introduction to BAT54XV2T5G

The BAT54XV2T5G is a semiconductor device belonging to the family of rectifier diodes also known as single diodes. This is a full-packaged diode designed with a schottky process to provide protection against reverse current flow and overvoltage spikes.

Application Field of BAT54XV2T5G

The BAT54XV2T5G is typically used in rectification circuits including switch mode power supplies, battery-operated equipment, and automotive electronics. It is also suitable for use in low power general-purpose applications, such as lighting, signal circuits, and pulse applications.

Features of BAT54XV2T5G

The BAT54XV2T5G has many beneficial features. It has an average forward current of 1A, reverse voltage of 30 V, a forward voltage drop of around 0.31V, and a capacitance of 1.45pF. This diode offers low power consumption, low forward voltage, fast switching time, and low reverse current leakages. The junction temperature is also rated up to 125oC.

Working Principle of BAT54XV2T5G

A single diode is a type of rectifying diode (also known as a single device) with two main terminals: the anode and cathode. When forward biased, the anode is positive relative to the cathode and a conductive path is formed. This allows a current flow within the device. The reverse biased operation, on the other hand, does not produce a conducting path and the current flow is thus blocked.In the case of BAT54XV2T5G, the forward current flows from the anode to the cathode, whereas the reverse current is blocked. The junction between the two internal layers of the diode generates a potential barrier that is responsible for the blocking and conducting behavior of the diode. This barrier potential is also responsible for the drop in the forward current, known as the forward voltage.

Conclusion

The BAT54XV2T5G is a single diode that can be used in a variety of applications, such as switch mode power supplies, battery-operated equipment, general-purpose electronics, and others. It is designed with the schottky process to provide fast switching and low forward voltage. The diode offers protection against reverse current flow and overvoltage spikes and can operate at a junction temperature up to 125oC. The working principle of the BAT54XV2T5G is based on the effects of the junction potential barrier, which is responsible for the conducting and blocking behavior of the diode.

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