Allicdata Part #: | BAT6804WE6327BTSA1TR-ND |
Manufacturer Part#: |
BAT6804WE6327BTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SCHOTTKY RF SERIES SOT-323 |
More Detail: | RF Diode Schottky - 1 Pair Series Connection 8V 13... |
DataSheet: | BAT6804WE6327BTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 8V |
Current - Max: | 130mA |
Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
Resistance @ If, F: | 10 Ohm @ 5mA, 10kHz |
Power Dissipation (Max): | 150mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BAT68-04 |
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The BAT6804WE6327BTSA1 is an integrated circuit designed for radio frequency (RF) applications. It is a wide range, low-power RF transmitter circuit, designed for a variety of applications, from cellular base stations to personal communication systems. The circuit is widely used in modern communication systems due to its high power output, excellent linearity and low distortion characteristics. It is also an ideal choice for wireless modems, wireless notebooks, personal digital assistant (PDA), computer networks and other wireless communication devices.The BAT6804WE6327BTSA1 is a monolithic single-package device that combines a transmitter, LNA (low noise amplifier), and IF (intermediate frequency) filter. It is based on a series of transistors and diodes, and its overall construction is quite simple. Its various components are connected in parallel and there is no need for circuit-level integration. The BAT6804WE6327BTSA1 is a high-efficiency, wideband amplifier, consisting of a low noise front-end, a driver stage and an output stage. The front-end is designed to receive and amplify very weak signals without inducing additional noise. The driver stage then boosts the received signal and extracts maximum power from the incoming signal, while the output stage amplifies and converts the amplified signal into a desired frequency range. The overall power efficiency of the device is heavily dependent on the impedance match between the driver stage and the output stage. The BAT6804WE6327BTSA1 is designed for a very wide range of applications which require very high-frequency operation. It is capable of providing up to 200MHz of maximum output power. The device also offers two power modes: low power (LP) and high power (HP). In LP mode, the device consumes less power, while in HP mode, it can achieve higher power output. The device can also operate in various digital modulation formats such as GMSK, IQ and FSK modulation formats.The BAT6804WE6327BTSA1 operates with a simple process. A predetermined signal is first converted into a modulated RF signal. This RF signal is then amplified, filtered and then sent out through the output stage. This output signal is then tuned in order to achieve maximum power and accuracy at the receiver end. The device also features temperature compensation and low current consumption, making it suitable for use in high temperature environments and low-power applications. In conclusion, the BAT6804WE6327BTSA1 is an efficient and reliable integrated circuit designed for radio frequency applications. It is capable of providing high power output with excellent linearity and low distortion. It features two power modes and several digital modulation formats, making it an ideal choice for modern communication systems. The device offers temperature compensation and low current consumption, making it suitable for use in high temperature environments and low-power applications. The device is thus an essential component for modern communication systems, providing reliable, low-power, and high-efficiency performance.
The specific data is subject to PDF, and the above content is for reference
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