Allicdata Part #: | BAT6806E6327HTSA1TR-ND |
Manufacturer Part#: |
BAT6806E6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SCHOTTKY 8V 130MA SOT-23 |
More Detail: | RF Diode Schottky - 1 Pair Common Anode 8V 130mA 1... |
DataSheet: | BAT6806E6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Pair Common Anode |
Voltage - Peak Reverse (Max): | 8V |
Current - Max: | 130mA |
Capacitance @ Vr, F: | 1pF @ 0V, 1MHz |
Resistance @ If, F: | 10 Ohm @ 5mA, 10kHz |
Power Dissipation (Max): | 150mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BAT68-06 |
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Modern gadgets and appliances require a high level of reliability, performance and efficiency, and RF diodes are among the many components that contribute to these qualities. The BAT6806E6327HTSA1 diode is a highly advanced, highly efficient RF diode designed for use in high power amplifiers. It is capable of handling an exceptionally large range of frequencies, from 1MHz to 5GHz. As such, it can be applied in a variety of different scenarios and applications.
A radio frequency (RF) diode is a semiconductor device that acts as a rectifier. This means that, when activated by a series of pulses, the diode is capable of passing electrical current in one direction only. This switching mechanism makes it ideal for controlling the flow of electricity at high frequencies, as it creates a rectified sine wave that can be used to control the power and output levels of RF amplifiers. In this way, RF diodes are often used in a variety of commercial and military applications, such as satellite and wireless communication, radar, and other high power systems.
The BAT6806E6327HTSA1 has a wide variety of features that make it an ideal choice for use in a number of different electronic devices. For starters, this diode has a maximum operating temperature of 175°C and a maximum operating current of 5 amps. This allows it to be used in environments with high temperatures and powered systems with high current requirements. Additionally, its high thermal performance ensures that the diode retains its accuracy and reliability even when used in extreme temperatures.
The BAT6806E6327HTSA1 diode also offers excellent frequency stability and performance. Its frequency response range starts at 1MHz, which means that it can be used with a wide variety of signals, including direct conversion transmitters, low noise amplifiers, and local oscillators. In addition, its 5GHz bandwidth ensures that it can handle signals with high frequencies. Finally, its high isolation characteristics make it suitable for use in situations where there is a lot of noise or crosstalk due to other devices.
The working principle of the BAT6806E6327HTSA1 is quite straightforward. When electricity is applied to the diode, it will pass through the diode in one direction only. This creates a rectified sine wave, which can be adjusted to control the output power and thereby the performance of the RF amplifier. Additionally, the diode can be used in conjunction with other components, such as integrated circuits and filters, to create a circuit that can be used to meet specific needs or increase efficiency.
The BAT6806E6327HTSA1 has a wide range of applications. It can be used in direct conversion transmitters, low noise amplifiers, and oscillators to improve the efficiency and performance of those devices. In addition, this diode can be used in radar detectors and telecom systems, as well as in high-power systems, such as satellite communication and military applications. Thanks to its high frequency stable and reliable performance, the BAT6806E6327HTSA1 is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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