Allicdata Part #: | BAV19TRTR-ND |
Manufacturer Part#: |
BAV19TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 120V 200MA DO35 |
More Detail: | Diode Standard 120V 200mA Through Hole DO-35 |
DataSheet: | BAV19TR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 120V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 100V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | 175°C (Max) |
Base Part Number: | BAV19 |
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Single rectifier diodes are widely used in applications that require current to flow in one direction with minimal loss. The BAV19TR is a popular power diode used in such applications due to its low forward voltage drop and high current ratings.
The BAV19TR is a small signal switching diode with a maximum forward current rating of 600mA and a maximum reverse voltage rating of 30V. It is an epitaxial base diode with anode and cathode connected by a single N-type semiconductor junction. This diode is constructed using a PN junction formed between a heavily-doped n-type epitaxial layer and a lightly-doped p-type base layer. The heavily-doped n-type epitaxial layer forms the anode, while the lightly-doped p-type base layer forms the cathode. It has a maximum junction capacitance of approximately 1.1pF, which is a key characteristic of this diode type.
The diode’s working principle is simple. The diode allows current to flow in one direction, from anode to cathode. When the forward voltage bias is greater than the reverse voltage bias, the diode conducts and allows current to flow. However, when the reverse voltage bias is greater than the forward voltage bias, the diode blocks and current cannot flow. Consequently, the forward voltage drop of this diode is very low, typically around 0.3V.
The BAV19TR diode is suitable for applications such as motor control, switching power supplies, DC-DC converters, and general-purpose rectification. It can also be used in audio, power line EMI, and various other signal processing applications. This diode is also ideal for use in applications requiring high surge currents, such as automotive and industrial arc welding. Furthermore, this diode’s low leakage current ensures superior reliability and efficiency in designs where low power consumption is critical.
In summary, the BAV19TR diode is a highly reliable and efficient single rectifier diode for a wide range of applications. It has a low forward voltage drop and high current ratings, making it ideal for high power applications. Additionally, its high junction capacitance ensures superior signal processing performance and reliability. Due to its wide range of features, the BAV19TR diode is a popular choice in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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