BAV99TA Allicdata Electronics

BAV99TA Discrete Semiconductor Products

Allicdata Part #:

BAV99ZXTR-ND

Manufacturer Part#:

BAV99TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ARRAY GP 75V 300MA SOT23-3
More Detail: Diode Array 1 Pair Series Connection Standard 75V ...
DataSheet: BAV99TA datasheetBAV99TA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BAV99
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BAV99TA is a diode array typically used in space-saving surface mount or chip packages. It also has two mechanical characteristics; one is its size which is typically much smaller than the alternatives and the other is the significantly miniaturized component which is typically 30% smaller than the traditional design. This offers both a cost advantage and improved performance.

In terms of electrical characteristics, the BAV99TA is a low power dual channel, surface mount, general purpose diode array with very low internal capacitance. It has a breakdown voltage of 118V, a leakage current of just 6nA, a on resistance of 0.33Ω, and a switching time of 75ns. Furthermore, it has a low storage time, which is important when higher frequency operation is required.

The BAV99TA is suitable for a variety of applications, including level shifting, steering, and protection circuitry. Its features enable it to be used in applications such as switching power supplies, general logic level shifting, motor control, and motor protection. Due to its low breakdown voltage, it is also suitable for direct insertion into the signal lines for protection purposes.

One of the most advantageous features of the BAV99TA is that it can be used to replace multiple single diodes, thus allowing multiple application needs to be met within a single device. This eliminates the need for individual components which are bulky and expensive, and allows for simpler and faster circuit design.

The working principle of BAV99TA is based on the physics of electron flow. The diode is made up of two p-type semiconductor layers separated by an n-type semiconductor layer. When a voltage is applied across the two layers, electrons flow from the positively charged p-type layer to the negatively charged n-type layer, generating a current. This process is often referred to as "diode conduction".

When the voltage across the two layers is negative, the reverse process occurs, and electrons flow from the n-type layer back to the p-type layer. This process is referred to as "reverse biased" and results in almost no current flow. The diode array works by using two channels of independent diodes that provide both forward and reverse biased conduction.

By using the BAV99TA, a range of unique circuit design possibilities are opened up. This ensures that the device can be used for a host of applications in both consumer and industrial applications. In addition, its extremely small size makes it well suited for use in circuits where space is at a premium. It is also suitable for use in high speed, high voltage applications.

The specific data is subject to PDF, and the above content is for reference

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