BAV99TQ-13-F

Diodes - Rectifiers - Arrays

The BAV99TQ-13-F is a PNP and NPN double diode array that incorporates two high speed diodes into one package. It is designed to serve as a double diode in a wide range of applications, including rectification, signal gating and because of its low capacitance, level shifting and clamping of high speed digital signals. The BAV99TQ-13-F offers good reverse bias avalanche breakdown and very low on-state resistance. It is halogen-free, which makes it a good choice for applications where environmental requirements must be met.

Application Field

The BAV99TQ-13-F diode array is typically used in applications where a high speed diode, such as a Schottky, is required. It is also ideal for applications requiring high switching speeds, low capacitance and low on-state resistance. Typical applications include ESD protection, level shifting, signal clamping and rectification in power supplies, logical level conversion and current limiting.

Working Principle

The BAV99TQ-13-F diode array is made up of two different diode strings. Each diode string includes two diodes, one PNP switch and one NPN switch. The two strings are connected in such a way that they can be used as a double diode in a single package. The two diodes in each string form a bridge rectifier, allowing current to flow in only one direction. The two PNP switches in the PNP string are connected in antiparallel, while the two NPN switches in the NPN string are connected in series. This arrangement allows the PNP and NPN switches to act as an open circuit or a short circuit depending on the polarity of the applied voltage.

The BAV99TQ-13-F also offers very low capacitance. This is advantageous for high speed applications, as it reduces the amount of time needed for a current pulse to pass through the diode. Additionally, the diode has a low on-state resistance, which allows it to conduct current more efficiently.

The BAV99TQ-13-F is a versatile diode array that is suitable for a wide range of applications. It offers a low capacitance, low on-state resistance, and an anti-parallel connection that allows it to be used as a double diode. It is an ideal choice for applications that require high switching speeds, level shifting and signal clamping.