BAV99W/MIF

Series:	Automotive, AEC-Q101
Part Status:	Last Time Buy
Diode Configuration:	1 Pair Series Connection
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io) (per Diode):	150mA (DC)
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 150mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	4ns
Current - Reverse Leakage @ Vr:	500nA @ 80V
Operating Temperature - Junction:	150°C (Max)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70

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BAV99W/MIF Application Field and Working Principle

Diodes - Rectifiers - Arrays

The BAV99W/MIF is a high performance dual common-cathode Schottky diode optimized for high speed switching applications. This device is designed for use in low voltage high frequency applications. It is intended for use in automotive applications such as relays, high speed circuits, solenoid controls and other applications where reliability and high speed performance is needed.The BAV99W/MIF features two Schottky diodes, each with a common cathode. The output source current is controlled by a P-channel MOSFET which can switch currents up to 5A. The device also features a P-channel MOSFET gate drive to reduce switching noise and improve performance.The BAV99W/MIF is a miniature device that is available in a SOT-23-6 surface mount package. It is offered in two versions, the BAV99W and BAV99MIF. The BAV99W is designed for standard switching applications and works up to 40V. The BAV99MIF is an improved version of the BAV99W and works up to 60V and is the best choice for automotive applications.The BAV99W/MIF is an ideal choice for automotive and other high-speed applications due to its low forward voltage drop and high speed performance. Its low voltage drop, combined with its high speed switching, makes it a great choice for automotive applications where reliability and speed are a must. When the BAV99W/MIF is used in an application, it is important to understand its working principle and application field.The BAV99W/MIF has two Schottky diodes, a P-channel MOSFET, and a P-channel MOSFET gate drive in a SOT-23-6 surface mount package. The operation of the device is based on the principle of rectification. The Schottky diodes are connected in series, with a common cathode. The forward voltage drop across the Schottky diodes is low, which allows for high speed switching. The P-channel MOSFET is used as a current switch to turn the current on and off, and the gate drive is used to reduce switching noise and improve performance.When the BAV99W/MIF is used in an application, the two Schottky diodes act as rectifiers. One diode will allow current to flow in one direction while blocking current in the opposite direction. The other diode will do the same, allowing current to flow in only one direction. Together they form a bridge rectifier. The bridge rectifier allows current to flow in both directions across the load, allowing for a more balanced flow.The P-channel MOSFET acts as a current switch. When the gate voltage is applied, the current begins to flow. This flow is then regulated by the P-channel MOSFET and can be turned on and off at high speeds. The gate drive circuit is used to reduce the switching noise of the P-channel MOSFET. The BAV99W/MIF is designed for high speed switching applications, and is most commonly used in automotive applications such as relays, high speed circuits, solenoid controls and other applications where reliability and speed are a must. Its high speed switching and low forward voltage drop make it a great choice for these applications.

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