BAW56W,135

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• Diodes - Rectifiers - Arrays

  The BAW56W,135 is a diode, commonly known as a rectifier that belongs to the array of diode rectifiers. This diode is made of Silicon and describes a unidirectional device which permits the flow of current mainly in one direction. The BAW56W,135 is a PN junction diode which uses the P region and N region in a crystal wafer of Silicon to prevent current from flowing in reverse direction.

• Application Field

  The BAW56W,135 diode is mainly used for general purpose rectification and can operate over a - 55° C to + 150° C temperature range. It is suitable for low and medium power rectification that occurs in a range of alternative AC voltages. The BAW56W,135 is suitable for most applications where having a fast switching speed is beneficial, as this diode is capable of switching operations up to 10,000 volts per microsecond.

• Working Principle

  The working principle of this diode is based upon a diode reformation process which occurs when alternating current or AC voltage is applied to the terminals. When this AC voltage is applied, the positive and negative voltage peaks are fed through the P part and N parts of the junction semiconductor. This causes the re-formation of the junction structure as the majority carriers in the semiconductor move from one side of the junction to the other. This movement of electrons creates an effect known as asymmetrical junction capacitance and depends on the nature of the semiconductor used for the diode.

• Conclusion

  The BAW56W,135 is a PN junction diode that offers general purpose rectification for medium power applications over a wide AC range of voltages. The diode is suitable for high frequency applications as it is capable of switching operations up to 10000 volts per microsecond. The working principle of the BAW56W,135 diode is based upon a process known as diode reformation, which results in the P region and N region of the semiconductor re-forming in the presence of applied AC voltage.

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