BAW56QAZ Allicdata Electronics
Allicdata Part #:

1727-2544-2-ND

Manufacturer Part#:

BAW56QAZ

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE HS SW 90V 180MA SOT1215
More Detail: Diode Array 1 Pair Common Anode Standard 90V 180mA...
DataSheet: BAW56QAZ datasheetBAW56QAZ Datasheet/PDF
Quantity: 1000
5000 +: $ 0.02620
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 180mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Description

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Diodes - Rectifiers - Arrays

The BAW56QAZ is a 3-terminal surface-mount rectifier diode array. It is housed in a industry standard SOT-23 package and is optimized for high speed switching applications when operating at a current under 1A. It is used in a wide variety of applications including rectifiers, voltage regulators, power switching, and low voltage protection.

Working Principle

The BAW56QAZ is a Schottky diode with a negative temperature coefficient. It is comprised of two PN diodes connected in series. This configuration allows for a very fast switching time and higher reverse leakage current. The diode array also has an insulated gate structure, which helps to reduce the power dissipation.

The switching of the diode array is defined by the voltage and current rating of the diode. When the diode is forward biased and an external voltage is applied to the anode, holes are injected into the depletion layer and form a conductive path. If a negative voltage is applied to the cathode, the current will be blocked and the diode will be in the reverse-bias state.

The diode array also has a reverse-recovery time, which is the time taken for the reverse current to go to zero. This feature helps to reduce the dynamic power dissipation and also helps to improve the reliability of the device. The reverse leakage current is also lower, thanks to the insulated gate structure.

Applications

The BAW56QAZ is used in a wide variety of applications. It can be used as a protective device in low voltage protection in automotive systems, used in power switching and voltage regulating applications, or even as a retifier in DC to DC converters. It can also be used in AC to DC power converters.

The BAW56QAZ is especially suitable for high-frequency switching applications and is capable of operating at a current of 1A. In such applications, the diode array can switch quickly and accurately, providing improved reliability and reduced power dissipation.

The BAW56QAZ is also suitable for high-power applications, as it can handle currents up to 1A and withstand reverse leakage of up to 10uA. It can also operate at a wide range of temperatures, from -55°C to +125°C.

Conclusion

The BAW56QAZ is a 3-terminal surface-mount rectifier diode array with a negative temperature coefficient. It is optimized for high speed switching applications, with a current rating of 1A and reverse leakage current of up to 10uA. It can also operate at a wide range of temperatures and is suitable for high-frequency and high-power applications.

The diode array\'s insulated gate structure provides improved reliability and reduced power dissipation, while its fast switching time makes it suitable for high-speed switching applications. It is used in a wide range of applications, including rectifiers, voltage regulators, power switching, and low voltage protection.

The specific data is subject to PDF, and the above content is for reference

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