Allicdata Part #: | BC368OS-ND |
Manufacturer Part#: |
BC368 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 20V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 1A 65MHz 625mW Th... |
DataSheet: | BC368 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 85 @ 500mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 65MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BC368 |
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BC368 Application Field and Working Principle
BC368 is a type of single bipolar junction transistor (BJT). It is a small-signal NPN transistor device with a DC current gain (hfe) range from 50 to 350, depending on the particular part number of the transistor device. The BC368 is designed for general-purpose low-power amplifying and switching applications such as audio amplifiers, crystal radio circuits and various other devices.
Features
- Silicon NPN epitaxial planar transistor
- Low noise figure
- High gain
- Low collector-emitter saturation voltage
- High transition frequency
Utilization
The BC368 can be used to amplify and switch a wide range of signals up to 35 volts, due to its low noise figure, wide gain range, low saturation voltage and high transition frequency. In radio frequency applications such as amplifying and oscillating circuit components, the BC368 is suitable for high-frequency amplification and switching.
Physical Dimensions
Thephysical size of the BC368 is 5.0 mm x 7.1mm x 1.0mm. Its power rating is 625 mW, which makes it suitable for various audio amplifications and crystal radio circuits.
Working Principles
Bipolar junction transistors (BJTs) are three-terminal devices composed of two p-type and one n-type semiconductor regions. They are built of four layers of semiconductor material. All BJTs have three terminals – the collector, base, and emitter.
In the BC368, a small voltage applied to the base-emitter junction helps to control the collector current, resulting in amplification of the device. As the current flowing into the collector (Ic) is proportional to the current flowing into the base (Ib), the ratio of Ic /Ib is known as the current gain (hfe) of the device.
The BC368 is manufactured and developed using a silicon NPN epitaxial planar transistor process. This process helps to provide a low noise figure, wide gain range, low saturable voltage, and high transition frequency. As a result, the BC368 can be used to amplify and switch a wider range of signals up to 35 volts, due to its high current gain, low noise figure and high transition frequency.
Conclusion
The BC368 is a single bipolar junction transistor (BJT) designed for low-power amplifying and switching applications such as audio amplifiers and crystal radio circuits. It is manufactured and developed using a silicon NPN epitaxial planar process, which helps to provide a low noise figure, wide gain range, low saturable voltage, and high transition frequency. The BC368 is suitable for high-frequency amplification and switching applications due to its high current gain and low noise figure.
The specific data is subject to PDF, and the above content is for reference
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