BC368 Allicdata Electronics
Allicdata Part #:

BC368OS-ND

Manufacturer Part#:

BC368

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 20V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 20V 1A 65MHz 625mW Th...
DataSheet: BC368 datasheetBC368 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 625mW
Frequency - Transition: 65MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC368
Description

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BC368 Application Field and Working Principle

BC368 is a type of single bipolar junction transistor (BJT). It is a small-signal NPN transistor device with a DC current gain (hfe) range from 50 to 350, depending on the particular part number of the transistor device. The BC368 is designed for general-purpose low-power amplifying and switching applications such as audio amplifiers, crystal radio circuits and various other devices.

Features

  • Silicon NPN epitaxial planar transistor
  • Low noise figure
  • High gain
  • Low collector-emitter saturation voltage
  • High transition frequency

Utilization

The BC368 can be used to amplify and switch a wide range of signals up to 35 volts, due to its low noise figure, wide gain range, low saturation voltage and high transition frequency. In radio frequency applications such as amplifying and oscillating circuit components, the BC368 is suitable for high-frequency amplification and switching.

Physical Dimensions

Thephysical size of the BC368 is 5.0 mm x 7.1mm x 1.0mm. Its power rating is 625 mW, which makes it suitable for various audio amplifications and crystal radio circuits.

Working Principles

Bipolar junction transistors (BJTs) are three-terminal devices composed of two p-type and one n-type semiconductor regions. They are built of four layers of semiconductor material. All BJTs have three terminals – the collector, base, and emitter.

In the BC368, a small voltage applied to the base-emitter junction helps to control the collector current, resulting in amplification of the device. As the current flowing into the collector (Ic) is proportional to the current flowing into the base (Ib), the ratio of Ic /Ib is known as the current gain (hfe) of the device.

The BC368 is manufactured and developed using a silicon NPN epitaxial planar transistor process. This process helps to provide a low noise figure, wide gain range, low saturable voltage, and high transition frequency. As a result, the BC368 can be used to amplify and switch a wider range of signals up to 35 volts, due to its high current gain, low noise figure and high transition frequency.

Conclusion

The BC368 is a single bipolar junction transistor (BJT) designed for low-power amplifying and switching applications such as audio amplifiers and crystal radio circuits. It is manufactured and developed using a silicon NPN epitaxial planar process, which helps to provide a low noise figure, wide gain range, low saturable voltage, and high transition frequency. The BC368 is suitable for high-frequency amplification and switching applications due to its high current gain and low noise figure.

The specific data is subject to PDF, and the above content is for reference

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