BC875,126 Allicdata Electronics
Allicdata Part #:

BC875,126-ND

Manufacturer Part#:

BC875,126

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN DARL 45V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 45V 1A 2...
DataSheet: BC875,126 datasheetBC875,126 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 830mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Description

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BC875,126 belongs to the category of transistors - Bipolar (BJT) – Single and was designed to be used in a variety of applications. It is a high gain, dual-diffused transistor that can be used in many types of electronic circuits. The BC875,126 is a great choice for designing projects that require high power dissipation, low power consumption, and high performance.

BC875,126 has a collector−base breakdown voltage of 45 V and a collector-emitter breakdown voltage of 30 V. It has a high frequency gain (hFE) of 150 and a low thermal resistance of 0.75 K/W. These characteristics make it suitable for applications such as RF amplifiers, audio amplifiers, and analog circuits.

One key feature of BC875,126 is its low transconductance and low current gain. While a high current gain is desirable for applications such as audio circuitry, it is not suitable for RF amplifier circuits. This is because high current gains can cause oscillations, which is why BC875,126 is the best choice for RF applications.

The working principle behind BC875,126 is fairly simple. The device acts as a switch between two circuits and is used to control the flow of current between the two. The number of layers, or junctions, used in the device determines how it works. When the gate of the BC875,126 is driven with an appropriate voltage, the current flow between the two circuits is controlled.

In order to make the BC875,126 function correctly, the gate of the device must be correctly connected to the collector and the emitter. The current flow between the two circuits is determined by the voltage drop across the base-collector junction of the device. The device is also capable of withstanding large changes in the current before it switches off.

Another unique characteristic of the BC875,126 is its high frequency response rate. This makes it ideal for applications such as radio receivers and oscillators, as it can respond quickly to changes in the circuit. The device also has excellent noise suppression, which means that it can be used in circuits where signal accuracy is essential.

Finally, BC875,126 has an excellent power handling capacity. This is because it has a high maximum power dissipation rating of 300 mW. This makes it ideal for applications such as power amplifiers, where high power is needed for maximum performance.

In conclusion, BC875,126 is a great choice for applications that require high power dissipation, low power consumption, and high performance. It is also great for applications such as audio amplifiers, RF amplifiers, power amplifiers, oscillators, and radio receivers. The device is easy to use and can withstand large changes in current before switching off. It also has a high frequency response rate, excellent noise suppression, and high power dissipation ratings.

The specific data is subject to PDF, and the above content is for reference

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