BCR 101L3 E6327 Allicdata Electronics
Allicdata Part #:

BCR101L3E6327-ND

Manufacturer Part#:

BCR 101L3 E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS NPN 250MW TSLP-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: BCR 101L3 E6327 datasheetBCR 101L3 E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-4
Description

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The BCR 101L3 E6327 transistor is a commonly used single-junction, pre-biased bipolar junction transistor (BJT). It is designed to be used in applications such as low-power switching, small-signal amplifiers, and low-voltage, low-current applications. In addition, the device can be used as a transistorized switch, or to provide constant current control.

The BCR 101L3 E6327 transistor is available in a wide variety of package types, such as D-pak, SOT-223 and TO-92, and comes with a variety of built-in features, including built-in protection diodes, improved noise immunity, and high-frequency performance. The device is rated for operation from -40°C to +105°C, and is capable of withstanding voltage ratings up to 600V.

The device operates by controlling the flow of current between two different terminals, known as the collector and the emitter. When the transistor is in its active state, current flowing from the collector to the emitter is controlled by the base of the transistor. The base terminal is designed to accept a voltage, known as the base voltage, which is applied across the base-emitter junction. The current then flows between the collector and emitter in accordance with the base voltage applied.

The amount of current that flows between the collector and emitter can be accurately determined by the base-emitter voltage, provided that the current gain of the device is known. The gain of the device is controlled by the ratio of the collector current to the base current, and this ratio is known as the current gain. In the case of the BCR 101L3 E6327, the current gain is typically between 40 and 80.

The BCR 101L3 E6327 transistor can also be pre-biased, meaning that a constant base voltage is applied to the base-emitter junction before the circuit is powered on. This helps reduce noise, increase performance and reduce start-up time. Pre-biasing can also reduce the risk of false triggering and enable the transistor to be used in a wider number of applications.

In addition, the BCR 101L3 E6327 transistor can be used in conjunction with a wide selection of peripheral components, such as resistors, capacitors and inductors, to create various different circuits. These circuits can range from basic voltage amplifiers and comparators to more complex fan controllers, current sources, and temperature sensors.

The BCR 101L3 E6327 transistor is a versatile, low-power, low voltage BJT that is suitable for applications such as low power switching, small-signal amplifiers, and current source control. Its broad range of features, including built-in protection diodes, pre-bias capability, low voltage operation, and a wide operating temperature range, makes it an ideal choice for a variety of applications. In addition, its wide array of peripheral components allows for a wide range of circuit applications, from basic voltage amplifiers to complex fan controllers.

The specific data is subject to PDF, and the above content is for reference

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