BCR 169T E6327

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BCR 169T E6327 is a single pre-biased bipolar junction transistor (BJT) containing a NPN transistor with integrated passive components. This type of transistor is commonly used in the production and design of high current and low power applications. As the name implies, a pre-biased BJT is a transistor that has been pre-biased to some specified conditions before being used for an electronic circuit application. This allows for more predictable operation and reduced complexity.

The differentiating factors in the design of a BCR 169T E6327 are the base-collector, base-emitter, and collector-base voltage ratings. These three parameters form an important part of determining the operational parameters of the circuit. Additionally, the BCR 169T E6327 has a maximum operating temperature of 135 °C and a minimum V CE sat of 0.4 V. This allows for operation in both high and low temperature environments, making it a suitable choice for many production and design applications.

The BCR 169T E6327 is available in various package styles such as surface mount and through-hole versions. Depending on the application, the dimensions of the device may vary, and it is important to select the right package size to suit the circuit requirements. Additionally, packages with additional features such as dielectric isolation and heat sinking are available.

The main application of the BCR 169T E6327 is in high current and low power applications, where the current and power requirements cannot be met by other BJT designs. Typically, the device is used in amplifier design, power management, switch mode power supply design, automotive applications, and more. In each of these applications, the BCR 169T E6327 operates as a current amplifier, allowing for higher currents to be passed through the device without being saturated.

The working principle of the BCR 169T E6327 is based on the transfer of electrons between two N-type and P-type semiconductors, which form a junction. The device has three connections: the Base, Collector, and Emitter. A voltage applied to the Collector-Base junction activates the Base-Emitter junction, allowing current to pass between the Collector and the Emitter. The ratio of the input current to the output current is known as the current gain or Hfe, which is dependent on the design of the BJT.

By controlling the voltage between the Base and Collector, the BCR 169T E6327 is able to accurately control the current flows within a circuit, providing excellent efficiency and precision. Additionally, due to the high current ratings of the device, it is able to handle currents that would otherwise be too high for a standard BJT. This allows the device to be used in various applications, such as power management, switch mode power supplies, and more.

The specific data is subject to PDF, and the above content is for reference