Allicdata Part #: | BCR103FE6327-ND |
Manufacturer Part#: |
BCR 103F E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW TSFP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR 103F E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 20mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 140MHz |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | PG-TSFP-3 |
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Bipolar Junction Transistor (BJT) technology is among the most widely used in semiconductor devices, and single pre-biased BJTs are a popular choice among the different types of transistors currently available. The BCR103F E6327 is an example of a single pre-biased BJT offering ease of use, flexibility, and reliable operation.
The BCR103F E6327 offers a wide range of applications and uses. This device is commonly used in voltage-controlled oscillators (VCOs), power converters, power amplifiers, and integrated circuits. Additionally, the BCR103F E6327 is used in a variety of consumer and industrial applications where high breakdown voltages and small device size are desired.
The BCR103F E6327 works using npn or pnp connections and can be operated at frequencies up to 100MHz. It also offers high current handling capabilities and efficient cut-off frequencies. This device operates at a divided voltage ranging between - 21V and + 21V, with a maximum current rating of 300mA. The device has a wide range of biasing and driving currents, making it versatile enough to be used in concentration and speed control circuitry.
The BCR103F E6327 has a number of features which make it an ideal choice for many applications. These features include its low operating temperature, low power consumption, low noise, and excellent thermal stability. In addition, this device is capable of withstanding high peak currents and is suitable for use in harsh environments.
The working principle of the BCR103F E6327 is based on the properties of transistors. This device is composed of three terminals; the base, collector and emitter; which are all connected together. When current is applied to the base, it is diverted away from the collector and into the emitter, creating a voltage drop. This voltage drop determines the biasing of the device and the level of conductivity between the emitter and collector. This device can be used in both amplifier and switch applications, due to its ability to switch on and off rapidly and accurately.
The BCR103F E6327 is an ideal choice for a wide variety of applications due to its many advantageous features. This device is available in different package styles and is easily integrated into circuits, with little effort required. It is an ideal choice for high-power and high-performance applications, as it offers reliability and excellent performance. The BCR103F E6327 is also a great choice for low-cost and high-efficiency circuits.
The specific data is subject to PDF, and the above content is for reference
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