BCR 133 B6327 Allicdata Electronics
Allicdata Part #:

BCR133B6327-ND

Manufacturer Part#:

BCR 133 B6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: BCR 133 B6327 datasheetBCR 133 B6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: BCR133
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 130MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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  • Introduction
  • BCR 133 B6327 is a single, pre-biased transistor, which belongs to the family of bipolar junction transistors (BJT). It is a low-current NPN transistor with a collector-emitter voltage rating of 30V and a collector current of 800mA. BCR 133 B6327 is typically used in various applications such as drivers, switch amplifiers, and audio amplifiers.

  • Application Field of BCR 133 B6327
  • Common applications of BCR 133 B6327 include LED lighting and LED drivers. The BCR 133 B6327 is ideal for driving applications, since its collector dissipation is steady and its protected characteristics provide performance enhancement. It is commonly used as a switch amplifier or driver in motion control, optical isolators and voltage switching.

    The BCR 133 B6327 is a great choice for audio amplifiers, since it has a low distortion, low output offset voltage, and good thermal stability. It is also used in voltage dividing circuits and data acquisition systems, such as bridge circuits and linearizing circuits. Moreover, BCR 133 B6327 is used in both DC and AC current applications. It is also used in the stability and gain selection of transistor amplifiers.

  • Working Principle
  • BCR 133 B6327 is an NPN type of transistor which works based on the emission of electrons by the base of the transistor. When a current flows through the emitter-base junction, the electrons flow from the emitter to the base, and these electrons are then collected by the collector. This process creates a gain in current in the collector-emitter circuit, and this is what is known as current amplification.

    The BCR 133 B6327 has two transistors, one in the collector-emitter circuit and one in the base-emitter circuit. The collector transistor has an emitter-collector junction and the base-emitter transistor has an emitter-base junction. The current that is input into the base of the collector-emitter transistor is amplified by the emitter-base transistor, causing an increase in the collector current. This is due to the fact that the base of the collector-emitter transistor controls the current that is amplified in the emitter-base transistor.

    BCR 133 B6327 is a pre-biased transistor, which means it has two active regions - the forward-biased region and the reverse-biased region. In the forward-biased region, the collector current is active and the voltage across the two terminals is low. In the reverse-biased region, the collector current is small and the voltage across the two terminals is high. This is beneficial for applications that require the transistor to switch between two active states.

  • Conclusion
  • In conclusion, BCR 133 B6327 is a pre-biased transistor that belongs to the family of bipolar junction transistors. It is typically used in various applications including LED lighting and LED drivers, switch amplifiers, audio amplifiers, and voltage dividing circuits. Its working principle is based on the emission of electrons by the base of the transistor, which creates an amplification in current in the collector-emitter circuit. Furthermore, it has two active regions, which is beneficial for applications that require switching between two active states.

The specific data is subject to PDF, and the above content is for reference

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