BCR 108T E6327

BCR 108T E6327 is a type of single, pre-biased, bipolar junction transistor (BJT). These transistors have multiple applications, including analog circuits, digital circuits, battery powered circuits, and converter based circuits. This article explains the application field and working principle of BCR 108T E6327 transistors.

Application Field

BCR 108T E6327 is a type of PNP transistor with collector current rating of 100mA and collector-emitter voltage rating of 800V, making it suitable for circuit designs that require high speed switching with excellent power and current capability. The built in base resistor also simplifies connecting to digital circuits and reduces the possibility of false triggering due to noise. It is well suited for use in pulse width modulation (PWM) circuits and fast digital switching applications. It can also be used in LED lightening circuits, audio amplifiers and inverters.

Working Principle

BCR 108T E6327 is a bipolar junction transistor (BJT) that consists of three layers of semiconductor material. The base layer is made up of a thin layer of P-doped material, the collector layer is a thick layer of P-doped material and the emitter layer is a thin layer of N-doped material. The transistor also has a built in base resistor that reduces the possibility of false triggering due to noise.

The working principle of the BCR 108T E6327 is based on the current flow between the collector and emitter terminals. When the base layer is forward biased, current flows between the collector and emitter and the transistor is in the ON state. When the base layer is reverse biased, current does not flow and the transistor is in the OFF state.

The current gain of BJT transistors also depend on the base current. The current gain (β) is defined as the ratio of the collector current to the base current. The higher the current gain of a transistor, the better its performance will be in digital and analog circuits.

Conclusion

BCR 108T E6327 is a type of single, pre-biased, bipolar junction transistor (BJT) with collector current rating of 100mA and collector-emitter voltage rating of 800V. Its built in base resistor makes it suitable for digital circuits and reduces the possibility of false triggering due to noise. It can be used in a variety of applications such as pulse width modulation circuits, fast digital switching and LED lightening circuits. Its operating principle is based on current flow between the collector and emitter terminals.