BCR 112F E6327

DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 5mA, 5V
Base Part Number:	BCR112
Supplier Device Package:	PG-TSFP-3
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	140MHz
Current - Collector Cutoff (Max):	100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	4.7 kOhms
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The BCR 112F E6327 Single, Pre-Biased bipolar transistor (BJT) is an effective and reliable device for a wide variety of power input applications. It is a small device, making it easily adaptable for any given application. The transistor is designed for use in power input circuits where high current output and low input current requirements are needed. The BCR 112F E6327 is a vertically integrated bipolar-transistor capable of handling up to 100 volts (V). The maximum achieveable collector-emitter voltage is given at 50Vdc. It has an additional collector-base voltage of 100V and an emitter-base voltage of 6V. The current gain of the device is specified to be 5mA/V. Additionally, the maximum continuous collector current given is 20mA for all base voltages. A key feature of the device is its pre-biased performance. It is designed to reduce the flow of current between the collector and emitter when the base voltage is below the collector voltage. This helps prevent thermal runaway and is useful in applications which require low supply current and minimum power dissipation. The device is fabricated on a silicon substrate. It consists of two encapsulated transistors in a single package. The first is the collector-base transistor and is connected externally to the bias voltage. The second is the emitter-base transistor and is connected externally to the input signal. The BCR 112F E6327 can be used in a wide range of power input applications. These include: relay switching, motor control, automotive and industrial power supplies, and motor controls. It is also well suited for low-frequency switching circuits. The working principle of the BCR 112F E6327 is fairly straightforward. The incoming signal into the base is amplified by the collector-base transistor. This signal is then amplified by the emitter-base transistor, resulting in an output signal at the collector. The pre-biased performance of the device helps reduce power dissipation and lower input current requirements. In summary, the BCR 112F E6327 is a small, pre-biased Single, Pre-Biased bipolar transistor (BJT) that is suitable for a wide range of power input applications. It is designed for use in circuits where high current output and low input current requirements are needed. Its pre-biased performance helps reduce power dissipation and lower input current requirements.

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