BCR 114F E6327 Allicdata Electronics
Allicdata Part #:

BCR114FE6327-ND

Manufacturer Part#:

BCR 114F E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS NPN 250MW TSFP-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: BCR 114F E6327 datasheetBCR 114F E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 160MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3
Description

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The BCR 114F E6327 is a pre-biased, single effort transistor which manufactures transistor products that are well-suited for a wide range of applications. It is intended primarily for automotive use, and its specialized design helps increase efficiency and reduce system size. In addition, its wide temperature range, performance and reliability make it a popular choice for automotive, industrial and consumer electronics applications.

The BCR 114F E6327 is a NPN pre-biased transistor with a collector-emitter voltage rating of up to 80 V, a continuous collector current of up to 0.8 A, and a power dissipation of up to 1.4 W. It consists of five transistors in a single package, each with a maximum current rating of 0.3 A, making it an excellent choice for applications requiring multiple transistors.

Due to its pre-biased design, the BCR 114F E6327 transistor can be used directly in an application, eliminating the need for external bias networks or voltage dividers. This simplifies the design of the power supply circuit and helps to reduce system cost and size.

The BCR 114F E6327 transistor has an ESD rating of up to 2 kV HBM and a storage temperature range of -40°C to 125°C. The product is also RoHS compliant and has Lead-free terminations. In addition, the product is also offered with gold-over-nickel (G/N) terminations for improved soldering.

The BCR 114F E6327 transistor has an extremely low input capacitance, making it very suitable for high-speed switching applications. The transistor also has an excellent thermal and electrical performance, with a minimum on-resistance of only 0.55Ohm (max.) and a maximum gate-to-source voltage of 5.0 V (Vgs(max)). It is also very fast, with a maximum switching time of 250ns.

The BCR 114F E6327 transistor is widely used in automotive, industrial and consumer electronics applications and is especially suitable for use in power circuits, such as power inverters, motor control circuits, and high-efficiency power supplies. In addition, it can also be used in audio amplification and other applications where low thermal resistance and minimum noise are important factors.

In summary, the BCR 114F E6327 transistor is a versatile, highly efficient and reliable transistor that is well-suited to a variety of application areas. Its pre-biased design simplifies circuit design and helps to reduce system size and cost, while its robust performance and wide temperature range makes it a popular choice for automotive, industrial and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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