BCR 135F E6327

DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 5mA, 5V
Base Part Number:	BCR135
Supplier Device Package:	PG-TSFP-3
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

BCR 135F E6327 is a single pre-biased transistor manufactured by ON Semiconductor. Its operating temperature ranges from -55°C to 150°C and its maximum collector-base breakdown voltage (VCBO) is 90V. This application field focuses on the broad range of applications the BCR 135F E6327 can be used for, as well as its working principle.

Applications

The BCR 135F E6327 is currently being used in a wide range of applications including switching, amplification, and rectification. As a single pre-biased transistor, it is mainly used to provide a predetermined bias of two transistors in two cascaded configurations. It is also used to control together the opening and closing of two circuit paths, provide voltage boosts and level shifts, serve as an interface between two electric circuits, and for voltage limiting.The BCR 135F E6327 is a popular device in automotive and consumer electronics, as it allows for power switching, drive current, and voltage protection. Additionally, it is being used in measuring and sensing applications such as automotive security systems and IP cameras. In consumer electronics it is used to drive various logic and power circuits, to buffer logic channels, and to provide voltage and current protection.

Working principle

The BCR 135F E6327 is a General Purpose NPN (negative-positive-negative) bipolar junction transistor with a transistor domain between the emitter and collector. This domain is where the current flows when the transistor is switched on. The input side of the transistor is the base, and when a small current is applied to it, it changes the entire circuit’s behavior. The base is connected to the emitter and collector through two junction layers. Typically, a small current applied to the base will be amplified hundreds of times greater at the collector.In addition, the BCR 135F E6327 has a built-in pre-biased configuration, which is achieved by clipping off the NPN regions and creating space for the bias current and electrical charge to pass through. This allows a separate bias current and potential to exist between the two terminals. This type of transistor is ideal for applications where multiple current gain stages are needed, where fast switching times and low power dissipation requirements are desired, and where a stable and reliable output current source is needed.

Conclusion

The BCR 135F E6327 is a single pre-biased transistor made by ON Semiconductor and widely used in automotive, consumer electronics, and measuring and sensing applications. It features a General Purpose NPN structure and the capability of the transistor domain to amplify the input current hundreds of times greater. The pre-biased structure of the device enables it to be used in multiple current gain stages, while also providing fast switching times and low power dissipation requirements as well as a stable and reliable output current source.

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