Allicdata Part #: | BCR146FE6327-ND |
Manufacturer Part#: |
BCR 146F E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW TSFP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR 146F E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 5mA, 5V |
Base Part Number: | BCR146 |
Supplier Device Package: | PG-TSFP-3 |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 70mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BCR 146F E6327 is a type of pre-biased single bipolar transistor (BJT). It is primarily used in circuits where a low-noise pre-amplification can be achieved with minimal power dissipation. The device is designed to be used with very low voltages and is suitable for switching and low-current power applications.
The BCR 146F E6327 consists of an NPN transistor with a protective guard ring connected to its base terminal for protecting the device from reverse breakdown. The device also has built-in diodes connecting the base and collector terminals to prevent a short-circuit when the base-collector voltage is reversed.
The main application fields of the BCR 146F E6327 are in low-power amplifier and switching applications. In amplifying applications, the device can be used to amplify weak signals, such as those coming from microphones and pressure sensors. In switching applications, the device can be used as a three-terminal switch or as a transfer switch.
The working principle of the BCR 146F E6327 is based on the principle of mutual conductivity. The device consists of an NPN transistor, which functions as a switch when the correct biasing voltage is applied between the base-collector terminals. The biasing voltage causes a current to flow between the collector and base terminals, and this current is controlled by the voltage applied to the base-collector junction.
The current gain of the device is determined by the ratio between the applied base current and the collector current. The current gain can be increased further by increasing the base-collector voltage. The device has a low input impedance, which makes it suitable for low-noise amplification applications.
Due to its low noise characteristics, the BCR 146F E6327 is very suitable for applications where a low-noise amplification is needed. It is also suitable for applications where low power consumption is a priority. In addition, the device is suitable for use in switching applications due to its high current gain and low input impedance.
The specific data is subject to PDF, and the above content is for reference
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