Allicdata Part #: | BCR148L3E6327-ND |
Manufacturer Part#: |
BCR 148L3 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW TSLP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR 148L3 E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR148 |
Supplier Device Package: | PG-TSLP-3-4 |
Package / Case: | SC-101, SOT-883 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 100MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 70mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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BCR 148L3 E6327 transistors are bipolar junction transistors (BJT), single, and pre-biased. BCR 148L3 E6327 transistors are mainly used in communications and analog circuits, as they offer low noise, low power consumption, and low distortion. BCR 148L3 E6327 transistors are also used in power management applications, such as in the regulation, amplification, and control of power.
These transistors are made from silicon and their structure consists of two n-type and one p-type layers of semiconductor. These layers then combine to form a single p-n junction, which is the distinguishing characteristic of bipolar transistors. This p-n junction is then further populated with three sets of electrodes; the base, collector and an emitter. When these three electrodes are connected together, they form a Transistor Action Region (TAR) that current can flow through.
The working principle of BCR 148L3 E6327 transistors is based on three characteristics of a bipolar junction transistor; the flow of current, the depletion of charge carriers and the voltage across the junction. Current flow is enabled when the voltage applied to the base electrode is greater than the voltage applied to the emitter electrode. This causes the depletion of charge carriers in the TAR and generates a voltage across the junction. This voltage difference then controls the amount of current flowing from the collector to the emitter.
BCR 148L3 E6327 transistors have many uses in electronic applications. They are commonly used for voltage amplification and switching. The transistors can be used to amplify signals from low power analog circuits by controlling the current to the load. They can also be used to switch a circuit on and off, as the voltage of the base electrode controls the flow of current from the collector to the emitter. BCR 148L3 E6327 transistors can also be used in power management applications, such as in the regulation, amplification, and control of power.
Overall, BCR 148L3 E6327 transistors are highly versatile components that offer a wide range of features and functionality to manufacturers. With their ability to amplify, switch and regulate power in a number of scenarios, they are an invaluable part of modern electronics.
The specific data is subject to PDF, and the above content is for reference
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