| Allicdata Part #: | BCR151TE6327-ND |
| Manufacturer Part#: |
BCR 151T E6327 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | TRANS PREBIAS PNP 250MW SC75 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | BCR 151T E6327 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 50mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 100 kOhms |
| Resistor - Emitter Base (R2): | 100 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 120MHz |
| Power - Max: | 250mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | PG-SC-75 |
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The BCR 151T E6327 is an advanced transistor specifically developed for an array of applications. It is developed as a single, pre-biased device, providing superior switching accuracy and low-power consumption compared to conventional transistors. These features enable a wide breadth of potential applications for the BCR 151T E6327.
In terms of design, the E6327 transistor is classified as a bipolar junction transistor (BJT), meaning its construction is based upon a three-part arrangement of P-type and N-type semiconductors. Anode and cathode junctions are connected together via a thin layer of base material, providing a small amount of current amplification when bias is applied. This switching action allows the transistor to function as a sort of "gate keeper" when connecting and disconnecting various circuits.
In order to effectively utilize the E6327 transistor, its working principle must be understood. After the transistor is biased, a small electric current is applied to the base junction; this is known as the "input" current. Due to the unique characteristics of the transistor, this small current will cause a large electric current to flow from the anode junction to the cathode junction; this is known as the "output" current.
The E6327 is primarily used in applications demanding precise positioning and faster switching action. This makes the E6327 suitable for a variety of switching applications such as motion control systems, automotive electronics, or industrial automation processes. In addition, the E6327 can be used as part of an electronic circuit for purposes such as voltage regulation, digital-to-analog conversion, or pulse-width modulation. Generally, the E6327 is best suited for operations requiring speeds up to 10MHz.
In terms of output characteristics, the E6327 is capable of providing a maximum output power of 3W (at 25 ˚C). Furthermore, the transistor can reliably handle input voltages up to 100V and output voltage up to 200V. These features enable the efficient operation of a wide range of simple and complex switching circuits.
The advantages of the E6327 over traditional transistors are many. Most notable is the device\'s low-power consumption, which enables the design of more energy-efficient circuits. In addition, the BCR 151T E6327\'s high switching accuracy avoids the issue of over- or under-voltage spikes. Finally, the transistor\'s small size and weight allows for a more efficient use of space in circuits.
All in all, the BCR 151T E6327 is a powerful and reliable device capable of fulfilling a wide range of switching, control, and voltage regulation needs. Its unique design and advanced features make it an ideal choice for applications requiring precise positioning and rapid switching action.
The specific data is subject to PDF, and the above content is for reference
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BCR 151T E6327 Datasheet/PDF