Allicdata Part #: | BCR162FE6327-ND |
Manufacturer Part#: |
BCR 162F E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW TSFP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR 162F E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 5V |
Base Part Number: | BCR162 |
Supplier Device Package: | PG-TSFP-3 |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BCR 162F E6327 Application Field and Working Principle
BCR 162F E6327 is a single, pre-biased Bipolar Junction Transistor (BJT). It is designed to provide high power gains and low power losses while maintaining a high level of reliability. The device is also extremely cost-effective, making it an ideal choice for a wide range of electronic applications.
Application Field of the BCR 162F E6327
The BCR 162F E6327 is ideally suited for use in a variety of electronic applications, including TV, audio, automotive, industrial, home appliance and medical. The device is particularly well-suited for use in audio and television applications, as it is capable of providing high audio output power with low distortion and noise-free operation. It is also suitable for use in automotive and industrial applications, such as actuators, sensors, control systems, relays and voltage regulators. Additionally, it can be used in home appliance and medical applications, where its high reliability and cost-effectiveness make it an appealing choice.
Working Principle of the BCR 162F E6327
The BCR 162F E6327 operates using the basic principles of bipolar transistors. Specifically, it comprises three junctions, known as the emitter-base junction, the collector-base junction and the emitter-collector junction. These junctions are formed by combining a small amount of P-type dopant and N-type dopant which act as emitter, base and collector components. When a voltage bias is applied, current is able to flow between the emitter and collector, while the flow of the current is controlled by the base region.
The BCR 162F E6327 is particularly advantageous as it features an integrated bias resistor, which allows for precise control of the current between the emitter and collector. Additionally, the integrated bias resistor also allows for precise control of the collector current by virtue of its ability to maintain a constant base-emitter voltage over a wide range of load and junction temperatures. This allows the device to provide steady, reliable performance under different operating conditions.
The BCR 162F E6327 is also designed to have a low threshold voltage, which results in increased reliability as there is less voltage headroom available to cause device failure. This makes the device particularly useful in situations which require a higher reliability or which are operating at higher temperatures.
Conclusion
The BCR 162F E6327 is a single, pre-biased Bipolar Junction Transistor (BJT) which offers high power gains and low power losses. The integrated bias resistor allows for precise control of the current between the emitter and collector, and the low threshold voltage results in increased reliability. As a result, the device is highly suitable for a wide range of electronic applications, including TV, audio, automotive, industrial, home appliance and medical.
The specific data is subject to PDF, and the above content is for reference
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