Allicdata Part #: | BCR196FE6327-ND |
Manufacturer Part#: |
BCR 196F E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW TSFP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR 196F E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 5mA, 5V |
Base Part Number: | BCR196 |
Supplier Device Package: | PG-TSFP-3 |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 70mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Bipolar Junction Transistors (BJTs) are widely used devices in electronics. The single, pre-biased BCR 196F E6327 is a popular choice when the application field specifically calls for a pre-biased device. It is a very versatile device that finds applications in a variety of situations.
The BCR 196F E6327 is a PNP-type transistor, meaning it is composed of two P-type contacts connected with N-type material. The device has a collector-base breakdown voltage of 40V. The collector current rating of this transistor is 400mA, and it can be operated at a maximum temperature of 125°C. It has low input capacitance characteristics and can handle frequencies up to 500MHz. Finally, Its noise figure is a low 1.5dB.
The BCR 196F E6327 is a pre-biased transistor and it is designed to be used in an already biased system. This means that the current flowing through the base-collector junction is determined by external circuit elements. It finds use in situations where the biasing of the transistor may be variable, thus requiring a pre-biased form factor. This allows the device to be used with transistors that have differently sized junctions, known as heterojunction transistors.
The working principle of the BCR 196F E6327 is in utilizing the flow of electrons from the collector to the base, allowing the current from the base-emitter junction to pass through the collector-base junction. This creates the current flow from the collector to the emitter. With this transistor pre-biasing the overall operation of the device is solely dependent on the external circuit\'s biasing conditions.
The BCR 196F E6327 is a great choice when a pre-biased form factor is a must, whether it be to allow for heterojunction transistors, or simply to place the device in an already pre-biased configuration. It features low capacitance characteristics and its collector current rating makes it capable of performing in high-power applications. With its excellent frequency support of up to 500MHz and a low noise figure, its no wonder why this transistor is a popular choice.
The specific data is subject to PDF, and the above content is for reference
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