Allicdata Part #: | BCX6816H6327XTSA1-ND |
Manufacturer Part#: |
BCX6816H6327XTSA1 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR AF SOT89-4 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 1A 100MHz 3W Surf... |
DataSheet: | BCX6816H6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.09275 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 1V |
Power - Max: | 3W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PG-SOT89 |
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BCX6816H6327XTSA1 is a PNP Transistor manufactured by NXP Semiconductors and is fast switching and high current gain, making it suitable for a wide range of applications. This Transistor is a member of the NPN family of Transistors, or Bipolar (BJT) - Single.
The BCX6816H6327XTSA1 application field covers a wide range of fields, including general purpose, amplifier and comparator applications, RF applications, power electronics and energy management for automotive, military and industrial products. Its working principle is to amplify the signal using its current gain, which is expressed in terms of the DC current gain, β.
The BCX6816H6327XTSA1 is able to work over a wide temperature range of -55oC to +150oC, making it suitable for a wide range of applications. Its collector current (Ic) is rated for a maximum of 10 Amp, with a maximum collector-emitter voltage (Vce) of 15V. Its collector-base voltage (Vcb) is limited to 70V and its emitter-base voltage (Veb) is limited to 5V.
The maximum power dissipation of the BCX6816H6327XTSA1 Transistor is 500 mW, while its operating temperature range is between -50oC and +110oC. Its maximum collector current (Ic) is 10 Amp, with a collector-emitter saturation voltage (Vce(sat)) of 0.2 V at 10 Amp. Its maximum junction temperature (Tj) is 150oC.
The BCX6816H6327XTSA1 Transistor is an NPN device with a DC current gain (βdc) of 250 hFE at Ic = 1 Amp. It has a minimum turn-on voltage of 0.7 V and a maximum turn-off voltage of 0.4 V at Ic = 1 Amp. Its collector-emitter saturation voltage (Vce(sat)) is limited to 0.4V at Ic = 5 Amp.
The BCX6816H6327XTSA1 Transistor has a very high frequency rate, which makes it ideal for RF applications and high speed switching. Its high speed switching rate of up to 100 kHz makes it suitable for applications such as switching regulators, DC-DC converters, AD converters and optical switching. Its high current gain of up to 250 hFE makes it suitable for applications such as audio amplifiers, power amplifiers and voltage regulators.
In conclusion, the BCX6816H6327XTSA1 is an excellent PNP Transistor that is suitable for a wide range of applications due to its wide temperature range, high power dissipation, high frequency rate and high current gain. It is a member of the NPN family of Transistors, or Bipolar (BJT) - Single, and is suitable for use in energy management for automotive, military and industrial products.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BCX6916E6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | TRANS PNP 20V 1A SOT-89Bi... |
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BCX6825H6327XTSA1 | Infineon Tec... | 0.11 $ | 1000 | TRANSISTOR AF SOT89-4Bipo... |
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BCX6916H6327XTSA1 | Infineon Tec... | 0.11 $ | 1000 | TRANSISTOR AF SOT89-4Bipo... |
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BCX6825E6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | TRANS NPN 20V 1A SOT-89Bi... |
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