BCX6925H6327XTSA1

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 500mA, 1V
Power - Max:	3W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PG-SOT89

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BCX6925H6327XTSA1 transistors are among the most powerful transistors available in the market, specifically classified as single bipolar junction transistors (BJT). Designed to handle high-voltage and high current load conditions, they are built with robust parameters, so they remain effective even in harsh environments and conditions.The main application of BCX6925H6327XTSA1 are in power switching transistor applications, with the majority of applications in industrial, motor and motor control, audio and telecommunications industries. This transistor can easily handle high voltage and current loads, and is suitable for controlling medium to large-sized incremental changes in current, making it perfect for a wide range of tasks, from motor control to switching applications.This BCX6925H6327XTSA1 also provides excellent thermal stability and is therefor a great choice for high power switching applications. In order to take full advantage of its capabilities, the transistor requires a large base current and relatively high operating temperature and has very low output capacitance.Due to its robust design and characteristics, the BCX6925H6327XTSA1 transistor is not only well suited for heavy duty industrial tasks, but can also be used in audio amplifiers, sinusoidal oscillators and other switching applications.The BCX6925H6327XTSA1 works by utilizing the principle of subthreshold conduction. This involves the creation of a hole, or energy level in the hole, when an electric field is applied on a base and collector junction. When the collector is energized, the current flows from the collector to the base, creating a voltage drop. The voltage drop in the base causes a decrease in the current, thus reducing the power generated.When the current that is flowing from the collector to the base is large enough, the voltage drop in the base will be great enough to cause the current to drop substantially, thus reducing or even completely stopping the power that is generated. This phenomenon is called reverse breakdown voltage, and it is this action that allows the transistor to regulate power output.The BCX6925H6327XTSA1 is an outstanding device for controlling medium to large changes in current, ensuring the reliability and stability of a digital circuit during operation. With its exceptional robustness and efficient current switching characteristics, the BCX6925H6327XTSA1 is a great choice for industrial, motor and motor control, audio and telecommunications applications.

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