BCX70J Allicdata Electronics
Allicdata Part #:

BCX70JTR-ND

Manufacturer Part#:

BCX70J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.2A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 45V 200mA 125MHz 350m...
DataSheet: BCX70J datasheetBCX70J Datasheet/PDF
Quantity: 29849
Stock 29849Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 125MHz
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BCX70
Description

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The BCX70J is a low voltage, low-saturation NPN silicon planar epitaxial transistor. This device is designed for use in amplifier, DC and AC switch circuits, pulse generation, oscillator, and other switching circuits as a low power amplifier, driver, and for other general purpose applications. It is also suitable for low noise and low frequency oscillator circuit.

The BCX70J transistor is an NPN device, which is capable of both amplification and switching operations. Its small size relative to other transistors allows it to be used in compact electronic systems. The transistor has a total power dissipation of 300mA with a maximum DC current gain of 200. It has a collector emitter voltage between 2.5V and 50V and a maximum collector base breakdown voltage of 75V.

The BCX70J is designed to deliver high voltage and high current capacity with a low power dissipation. It has a low saturation voltage, assuring high reliability in switch and amplifier circuits. The device has a wide base-emitter saturation voltage rating, which prevents saturation of the internal protection network, while providing protection against overload and short-circuit conditions. The design of the BCX70J also provides a low residual gain to reduce parasitic oscillation frequency.

The working principle of the BCX70J is based on the flow of electrons from the emitter to the collector terminals. The current flow between the collector and base terminals is controlled by the base current. When a voltage is applied to the base, it modulates the current conducted from the collector to the emitter. The collector current is a function of the base current, and therefore the gain of the device is determined by the ratio of the current passing through the emitter to that passing through the base.

The BCX70J can be used in many applications where low voltage, low power, and high reliability are required. These include amplifiers, voltage regulators, DC and AC switches, pulse generators, and other switching circuits. The device is also suitable for use in low noise and low frequency oscillator circuits.

In summary, the BCX70J is an NPN silicon planar transistor designed for amplification, DC and AC switch circuits, pulse generation, and other switching circuits. It provides high voltage and current capacity with a low power dissipation. The device is also suitable for low noise and low frequency oscillator circuits.


The specific data is subject to PDF, and the above content is for reference

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