BD37916STU Allicdata Electronics
Allicdata Part #:

BD37916STU-ND

Manufacturer Part#:

BD37916STU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 2A TO-126
More Detail: Bipolar (BJT) Transistor NPN 80V 2A 25W Through H...
DataSheet: BD37916STU datasheetBD37916STU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 25W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: BD379
Description

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The BD37916STU is a highly versatile single transistor designed for use in a number of applications. It has a variety of features that make it suitable for a wide range of applications, including high dimensional stability, high current and low noise.

The BD37916STU is a NPN silicon bipolar transistor which can be used for many purposes, such as audio processing, high power switching, amplifier circuits, pulse applications and oscillators. It has a current amplification factor (hfe) of 200-400. It also has an effective voltage gain (hFB) of 100-200.

The BD37916STU can operate in a wide temperature range from –55 to +175 degree Celsius, making it suitable for harsh enviroments and longterm stability. The maximum power dissipation is 400mW and the maximum collector current is 200mA.

The mainstay of the BD37916STU device is its ability to amplify current. It works by allowing electrons to flow through its PN junction. The PN junction is basically a sandwich of two types of semiconductor materials - p-type and n-type. Electrons and holes (positively charged particles) can be generated when these two materials come into contact. The current flowing through the transistor can be increased by controlling the flow of these electrons and holes.

The equivalent circuit of the BD37916STU shows how the device is constructed. The three main components are the base, collector and emitter. The base forms the control terminal of the transistor, and its purpose is to control the current flow between the collector and emitter. When the base current increases, the collector-emitter current also increases. This results in the transistor amplifying current.

The BD37916STU device can also switch between different voltage or current levels, depending on the applied signal. When the base voltage is above the ON threshold voltage, the device is switched ON and current flows between the collector and emitter. When the base voltage is below the OFF threshold voltage, the device is switched OFF and the current flow is reduced. This type of switching is often used in switching power supplies.

The BD37916STU is a highly versatile and reliable device due to its wide range of features and applications. Its high current, high dimensional stability and low noise make it suitable for many applications. In addition, its ability to amplify current, switch between different voltage and current levels and operate in a wide temperature range make it suitable for both industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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