Allicdata Part #: | BD37925STU-ND |
Manufacturer Part#: |
BD37925STU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 2A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 2A 25W Through H... |
DataSheet: | BD37925STU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 1A |
Current - Collector Cutoff (Max): | 2µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 150mA, 2V |
Power - Max: | 25W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | BD379 |
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The BD37925STU is a single type of bipolar junction transistor (BJT). It is a solid state device which uses two p-n junctions to control the current flow between two different parts of a circuit. The BJT is mainly used to amplify small signals in the circuit. It is also used in many applications such as communication systems, audio amplifiers, and industrial applications.
The BD37925STU consists of two p-type and one n-type semiconductor layers which form a three-layer junction. The base is the middle layer which is formed by the p-type semiconductor. The collector is the most heavily doped n-type layer, which is connected to the positive voltage source. The emitter is the least doped n-type layer, which is connected to the negative voltage source. When the base is forward biased with a small voltage, the voltage difference between collector and emitter causes the electrons from the base to pass through the junction and move towards the base. This causes the base current to increase, which in turn causes the collector current to increase.
The BD37925STU has many applications. It is mostly used as an amplifier in radio frequency transceivers. It is also used to control the power output of audio amplifiers. In industrial applications, it is used to control the speed of electric motors and in home appliances like dishwashers and microwave ovens. It is also used in other applications such as voltage regulation, current limiting, and switching.
The working principle of the BD37925STU is based on a basic amplifier design. The transistor structure is connected in such a way that the voltage is applied to the base and the current flows through the emitter and collector. When the emitter-base bias voltage is increased above a certain level, the transistor is said to be in the active region. In this region the collector voltage remains constant and the collector current increases. This increase in the collector current is due to the flow of electrons across the junction. Since this current can be controlled by varying the input voltage, it can be used to control the output current in an amplifier.
In conclusion, the BD37925STU is one of the most popular types of bipolar junction transistors. It is usually used as an amplifier in circuits and can be found in various applications. It is also used for controlling power output in audio amplifiers and in industrial applications like motor control and home appliances. The working principle of the BD37925STU relies on the flow of electrons across the junction, which increases the collector current when the base voltage is increased above a certain level.
The specific data is subject to PDF, and the above content is for reference
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