BD45402G-TR Allicdata Electronics
Allicdata Part #:

BD45402GTR-ND

Manufacturer Part#:

BD45402G-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC RESET OD 4.0V 200MS 5SSOP
More Detail: Supervisor Open Drain or Open Collector 1 Channel ...
DataSheet: BD45402G-TR datasheetBD45402G-TR Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: BD45xxx
Packaging: Tape & Reel (TR) 
Part Status: Active
Type: Voltage Detector
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: Active Low
Reset Timeout: 180 ms Minimum
Voltage - Threshold: 4V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: 5-SSOP
Base Part Number: BD45
Description

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The BD45402G-TR is a high voltage P-MOSFET driver (MOS Gate Driver) available from ROHM. It is a low on-resistance, high-performance bidirectional gate driver IC, capable of supplying up to 8A of gate current. This gate driver can be used for a variety of applications, such as for driving MOSFETs, IGBTs, Bridge Rectifiers, and other devices demanding low power and high speed switching.

The BD45402G-TR is typically used in power management and switching power supply circuitry, including LED lighting systems. It is also well-suited for use in battery chargers, motor drives, and DC-DC converters. It is designed to drive low to medium power MOSFETs and IGBTs with high-speed switching performance and guarantees low switching losses. The design also allows for optimized gate buffer performance, which leads to reduced noise and interference.

The BD45402G-TR is built on a monolithic integrated circuit (IC) and is housed in a TSSOP-8 ( Thin small-outline package) package. It has features such as an integrated start-stop input, a built-in shoot-through protection circuit, and a built-in output short-circuit protection circuit. It also has an internal charge pump for generating external level VGG for applications that require high voltage and high-charging capacity.

The core function of the BD45402G-TR is to provide high-speed switching between the P-channel MOSFETs, IGBTs, Bridge Rectifiers, and other devices that require low power and high-speed switching. The high speed switching capabilities are achieved through an array of integrated drivers. The integrated drivers in the BD45402G-TR each have their own internal protection circuit, which reduces the risk of components overheating or failing due to an overload or internal short circuit. This reduces the risk of circuit damage and improves system reliability.

The BD45402G-TR also provides low input signal threshold voltage, fast transient response, over-voltage protection, shoot-through protection, and brown-out protection. The shoot-through protection prevents the MOSFETs from turning on simultaneously, thus, reducing the risk of damage to the devices. The integrated start-stop input allows changes of state to the drivers on the fly, minimizing delay and ensuring rapid switching.

The BD45402G-TR is an ideal choice for a variety of power management and switching power supply circuitry designs. It provides a low on-resistance and high-performance bidirectional gate driver IC, capable of supplying up to 8A of gate current, coupled with features such as an integrated start-stop input and shoot-through protection. The high-speed switching capabilities and built-in protection mechanisms ensure the reliability and efficiency of the designed circuits.

The specific data is subject to PDF, and the above content is for reference

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