| Allicdata Part #: | BD543B-S-ND |
| Manufacturer Part#: |
BD543B-S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Bourns Inc. |
| Short Description: | TRANS NPN 80V 8A |
| More Detail: | Bipolar (BJT) Transistor NPN 80V 8A 2W Through Ho... |
| DataSheet: |  BD543B-S Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 8A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 1.6A, 8A |
| Current - Collector Cutoff (Max): | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 5A, 4V |
| Power - Max: | 2W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
Description
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The BD543B-S is a type of bipolar junction transistor (BJT) single device. It has a variety of general-purpose application possibilities, from amplifying and switching applications to power switching and, even, adjustable-gain amplifiers. Its working principle and capability open up a variety of possibilities for the engineer or designer looking to create an efficient and effective power supply, or even a fully functioning circuit.
Bipolar junction transistors (BJTs) are two-terminal, three-layer devices consisting of a base, an emitter and a collector. They are usually made of a semiconducting material such as silicon and germanium, with the base and collector negative and the emitter positive.
In a BJT, the current passing through the base-collector junction is controlled by the current flowing through the emitter-base junction. This current is referred to as the base current. The base current is also responsible for controlling the amount of minority carriers flowing through the base-collector junction, which, in turn, controls the overall current flow of the device.
The BD543B-S device is a collector controlled type of BJT. This means that the current that flows through the collector is controlled by the amount of current flowing through the base. The advantage of this particular type is that it offers a wide range of gain and power output, allowing for high performance applications such as switching and amplifying.
In terms of its application field, the BD543B-S is well suited for general-purpose amplifying and switching applications. It is well suited for high performance operation in both switching and amplifying applications, with the collector being able to handle current up to 1A and the power output up to 30W. It can also be used in adjustable-gain amplifiers and power switching applications, due to its wide range of gain and power levels available.
The working principle of the BD543B-S is based on the collector being controlled by the base current. When a certain base current is applied, the corresponding collector current is produced. The collector current is inversely proportional to the base current, meaning that a greater base current produces a lower collector current. This makes it ideal for high gain amplifying and switching applications, as the collector current can be controlled quite accurately depending on the amount of base current applied.
The BD543B-S is a versatile device that can find application in many different types of circuits. Its working principle and high power output makes it a popular choice for power supply designs and adjustable gain amplifiers. It can be used for a variety of general purpose applications, from amplifying to switching and power switching. Its high performance capabilities and wide range of gain and power levels available make it a great choice for designers and engineers looking to create a fully functioning and powerful circuit.
The specific data is subject to PDF, and the above content is for reference
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