Allicdata Part #: | BD546A-S-ND |
Manufacturer Part#: |
BD546A-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP 60V 15A SOT-93 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 15A 3.5W Through... |
DataSheet: | BD546A-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 2A, 10A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 10A, 4V |
Power - Max: | 3.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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The BD546A-S is a type of bipolar junction transistor (BJT). It is a single transistor with three electrodes (collector, base, and emitter) forming a generic electronic switch. The BD546A-S is commonly used for general-purpose switching and amplification, as well as an input device for logic circuits.
This transistor is a NPN type, meaning that it is composed of an N-type semiconductor layer (doped with an impurity that gives each layer negative charge carriers) sandwiching a P-type semiconductor layer, which contains an impurity that provides positive charge carriers. In the BD546A-S, both P-type and N-type layers are silicon hence giving the transistor the name ‘silicon-silicon.’
The BD546A-S has a reversed saturation voltage of 15V, a maximum collector current of 4A, and a maximum power dissipation of 25W. It also has a maximum collector-emitter breakdown voltage of 60V, a minimum collector-emitter saturation voltage of 250mV, and a typical current gain-bandwidth product of 200MHz.
The BD546A-S is commonly found in consumer devices such as switches, transistors, relays, and motors, as well as other higher-current applications. It can also be used as an amplifier and oscillator, thanks to its linear characteristics when operated in saturation mode.
So how does the BD546A-S work? The base terminal is used to control the collector current, which in turn flows through the transistor\'s emitter-collector junction. The emitter-collector junction acts as a resistor, allowing the collector current to flow only when the base-emitter junction is forward biased (which means current is flowing through the junction). When no forward bias is applied, the transistor is in the cutoff state, meaning there is no current flow through the base-emitter junction.
In the active mode, the collector current can be controlled by changing the current flowing in the base-emitter junction. Generally, an increase in the base current will result in an increase in the collector current. This type of transistor is also known as a current-controlled device since the base current is used to control the collector current. This feature makes the BD546A-S useful for amplifying or switching purposes.
In conclusion, the BD546A-S is a single bipolar junction transistor (BJT) which features a reverse saturation voltage of 15V, a maximum collector current of 4A, and a maximum power dissipation of 25W. It is commonly found in consumer devices such as switches, transistors, relays, and motors, as well as other higher-current applications. With its linear characteristics when operated in saturation mode, the BD546A-S can also be used as an amplifier and oscillator. The BD546A-S is a versatile device which can be used for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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