BD810G

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1.1V @ 300mA, 3A
Current - Collector Cutoff (Max):	1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 4A, 2V
Power - Max:	90W
Frequency - Transition:	1.5MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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Introduction: The BD810G is a single-transistor bipolar junction transistor (BJT) and a Microwave High-Power Epitaxial Transistor component typically used in the radio frequency (RF) and microwave range. This component is commonly used in a variety of industrial and consumer applications such as in radio transmission, power amplifiers and antennas.Application Fields: The BD810G transistor can be used in a wide range of applications such as telecommunications, military and commercial systems, as well as consumer applications. This component is specifically designed to operate in high-power microwaves, from 700 MHz up to 3 GHz, due to its high frequency and power capabilities. In the telecommunications sector, it is used for a wide range of functions such as transmitters for industrial, government and military communication systems, as well as cell phones and consumer devices. This component can also be used in land and mobile radios, such as two-way radios, and in point-to-point microwave systems.In consumer electronics, the BD810G transistor is used for a variety of consumer products such as Bluetooth headphones, amplified speakers and car audio systems.The BD810G transistor can also be used in industrial applications such as radio frequency heating, medical imaging equipment, robotics and RFID readers. When used in these applications, this component provides high power and reliable operation.Working Principle: The BD810G transistor works on the principle of minority carrier injection. Minority carriers are electrons or holes (positive charges) that are injected into the base region. Because the base of the transistor is very thin and lightly doped, majority carriers (holes or electrons) cannot enter the base region to counteract the minority carriers and return them to the emitter or collector. This allows a current to be driven through the transistor.The transistor consists of three regions: collector, base, and emitter. There are four terminals, two of which are the collector and emitter, which are connected to electrical power sources. Applying a voltage to the collector and emitter causes current flow or current amplification in the transistor. The base connects to the controlled voltage source, which controls the amount of current flowing between the emitter and collector, via the base. This process is what makes the transistor act as an amplifier.The BD810G transistor has a high maximum collector current of 50A and high power capability up to 8W, which makes it a good choice for RF and microwave applications. The package of the transistor is designed for surface mounting and low profile, making it ideal for use in tight spaces.Conclusion: The BD810G is a single-transistor bipolar junction transistor (BJT) and a Microwave High-Power Epitaxial Transistor component typically used in the radio frequency (RF) and microwave range. It has a wide range of application fields, from telecommunications, military and commercial systems to consumer electronics, and offers high power capabilities up to 8W. The BD810G transistor works on the principle of minority carrier injection and requires a voltage to be applied to the collector and emitter to drive current through the transistor. The package of the transistor is designed for surface mounting and low profile, which makes it ideal for use in tight spaces.

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