Allicdata Part #: | BD810-ND |
Manufacturer Part#: |
BD810 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 10A TO-220AB |
More Detail: | Bipolar (BJT) Transistor PNP 80V 10A 1.5MHz 90W Th... |
DataSheet: | BD810 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.1V @ 300mA, 3A |
Current - Collector Cutoff (Max): | 1mA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 4A, 2V |
Power - Max: | 90W |
Frequency - Transition: | 1.5MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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BD810 Application Field and Working Principle
The BD810 is a PNP Silicon epitaxial transistor used as an amplifier, switch and DC-DC converter. It belongs to the single-transistor bipolar junction transistor family. Before we look at its application field and working principle, we’ll first discuss some of its features and specifications.
Features and Specifications
- Maximum Collector Current of 10A
- Maximum Power Dissipation of 41W
- Maximum Collector-Emitter Voltage of 100V
- Terminals Configuration: 3-Lead TO-220AB
The BD810 has better reliability and durability than many other transistors because of its low collector-to-emitter voltage and current gain. Its terminals configuration and power dissipation make it suitable for a wide range of applications.
Application Field
The BD810 has a range of applications in amplifier, switch and DC-DC converter. It is suitable for high current applications such as audio power circuits, bipolar power supplies, switching power supplies, and DC-DC converters. It is also used in servo circuits, audio amplifiers, and other power amplifiers.
Working Principle
A BJT is basically a three-terminal current control device, in which the current flow between the collector and the emitter terminals is controlled by the current flow between the base and the emitter terminals.
The BJT consists of three main regions, namely the base, collector and emitter. The base region is very thin and has a large number of electrons. These electrons recombine with the positively charged holes in the base, thus controlling the electric field in the base.
The collector region is thicker than the base region, and has less free electrons. Electrons from the base region are attracted to the collector region. This creates an electric field in the collector region. This electric field accelerates the collector carriers and causes them to flow from the collector to the emitter.
The emitter region is the thickest of the three regions and contains the largest number of electrons. The emitter region is also the most important part of the BJT. electrons in the emitter region are accelerated towards the collector region due to the electric field created in the emitter. This results in the current flow between the collector and emitter.
The BD810 works on the principle of a bipolar junction transistor (BJT). When it receives input current, the current flow from the base to the emitter controls and influences the current flow from the collector to the emitter. The BD810 can be used as an amplifier, switch and DC-DC converter.
Conclusion
The BD810 is a high current PNP Silicon epitaxial transistor used as an amplifier, switch and DC-DC converter. Its features and specifications make it suitable for a wide range of applications such as audio power circuits, bipolar power supplies, switching power supplies, and DC-DC converters. It operates on the principle of a bipolar junction transistor (BJT).
The specific data is subject to PDF, and the above content is for reference
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